Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features.

A III-V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420 A/cm(2) for gain-guided lasers with bottom p-stripes and top n-stripes and 244 A/cm(2) for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of approximately 995 nm. These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.

Dual-band planar electric metamaterial in the terahertz regime.

We present the design, fabrication, and measurement of a dual-band planar metamaterial with two distinct electric resonances at 1.0 and 1.2 THz, as a step towards the development of frequency agile or broadband THz materials and devices. A method of defining the effective thickness of the metamaterial layer is introduced to simplify the material design and characterization. Good agreement between the simulated and measured transmission is obtained for the fabricated sample by treating the sample as multi-layer system, i. e. the effective metamaterial layer plus the rest of the substrate, as well as properly modeling the loss of the substrate. The methods introduced in this paper can be extended to planar metamaterial structures operating in infrared and optical frequency ranges.

Chip scale integrated microresonator sensing systems.

Medicine, environmental monitoring, and security are application areas for miniaturized, portable sensing systems. The emerging integration of sensors with other components (electronic, photonic, fluidic) is moving sensing toward higher levels of portability through the realization of self-contained chip scale sensing systems. Planar optical sensors, and in particular, microresonator sensors, are attractive components for chip scale integrated sensing systems because they are small, have high sensitivity, can be surface customized, and can be integrated singly or in arrays in a planar format with other components using conventional semiconductor fabrication technologies. This paper will focus on the progress and prospects for the integration of microresonator sensors at the chip scale with photonic input/output components and with sample preparation microfluidics, toward self-contained, portable sensing systems.