RESUMEN
The discovery of the fractional quantum Hall state (FQHS) in 1982 ushered a new era of research in many-body condensed matter physics. Among the numerous FQHSs, those observed at even-denominator Landau level filling factors are of particular interest as they may host quasiparticles obeying non-Abelian statistics and be of potential use in topological quantum computing. The even-denominator FQHSs, however, are scarce and have been observed predominantly in low-disorder two-dimensional (2D) systems when an excited electron Landau level is half filled. An example is the well-studied FQHS at filling factor [Formula: see text] 5/2 which is believed to be a Bardeen-Cooper-Schrieffer-type, paired state of flux-particle composite fermions (CFs). Here, we report the observation of even-denominator FQHSs at [Formula: see text] 3/10, 3/8, and 3/4 in the lowest Landau level of an ultrahigh-quality GaAs 2D hole system, evinced by deep minima in longitudinal resistance and developing quantized Hall plateaus. Quite remarkably, these states can be interpreted as even-denominator FQHSs of CFs, emerging from pairing of higher-order CFs when a CF Landau level, rather than an electron or a hole Landau level, is half-filled. Our results affirm enhanced interaction between CFs in a hole system with significant Landau level mixing and, more generally, the pairing of CFs as a valid mechanism for even-denominator FQHSs, and suggest the realization of FQHSs with non-Abelian anyons.
RESUMEN
We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of â¼2.2 × 108 cm-2. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. In addition to this global variation in electron density, we observe local density fluctuations across the sample. These random density fluctuations are also seen in samples that were continuously rotated during growth, and we attribute them to residual space charges at the substrate-epitaxy interface. This is corroborated by the fact that the average magnitude of density fluctuations is increased to â¼9 × 109 cm-2 from â¼1.2 × 109 cm-2 when the buffer layer between the substrate and the quantum well is decreased by a factor of 7. Our data provide direct evidence for local density inhomogeneities even in very high-quality two-dimensional carrier systems.
RESUMEN
The edges of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime are divided into alternating metallic and insulating strips, with their widths determined by the energy gaps of the QHE states and the electrostatic Coulomb interaction. Local probing of these submicrometer features, however, is challenging due to the buried 2DEG structures. Using a newly developed microwave impedance microscope, we demonstrate the real-space conductivity mapping of the edge and bulk states. The sizes, positions, and field dependence of the edge strips around the sample perimeter agree quantitatively with the self-consistent electrostatic picture. The evolution of microwave images as a function of magnetic fields provides rich microscopic information around the ν=2 QHE state.
RESUMEN
Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.