Rational design of a two-dimensional high-temperature ferromagnet from HCP cobalt.

Cobalt has the highest Curie temperature (Tc) among the elemental ferromagnetic metals and has a hexagonal close-packed (HCP) structure at room temperature. In this study, HCP Co was thinned to the thickness of several (n) unit cells along the c-axis and then passivated by halogen atoms, thus being named Co2nX2 (X = F, Cl, Br and I). For Co2X2 and Co3X2, all of them are not only kinetically but also thermodynamically stable from the viewpoint of the phonon spectra and molecular dynamics. Similar to HCP Co, two-dimensional (2D) Co2F2, Co2Cl2 and Co3X2 (X = Cl, Br and I) are still ferromagnetic metals within the Stoner model but Co2X2 (X = Br and I) is a ferromagnetic half-metal with the coexistence of the metallic behavior for one spin and the insulating behavior for the other spin. Taking into account the spin-orbital coupling (SOC), the easy-magnetization axis is within the plane where the magnetization is isotropic, making it look like a 2D XY magnet. Applying a critical biaxial strain could lead to an easy-magnetization axis changing from the in-plane to the out-of-plane direction. Finally, we use classical Monte Carlo simulations to estimate the Curie temperature (Tc) which is as high as 957 and 510 K for Co2F2 and Co2Cl2, respectively, because of the strong direct exchange interaction. Different from being obtained by mechanical or liquid exfoliation from van der Waals layered structures, our study opens up new possibilities to search for novel 2D ferromagnets from the elemental ferromagnets and provides opportunities for realizing realistic ultra-thin spintronic devices.

Momentum matching induced giant magnetoresistance in two-dimensional magnetic tunnel junctions.

Giant magnetoresistance was first experimentally discovered in three-dimensional magnetic tunnel junctions (MTJs) in the late 1980s and is of great importance in nonvolatile memory applications. How to achieve a magnetoresistance as large as possible is always a central task in the study of MTJs. However, it is normally only of the order of magnitude of tens of percent in traditional MTJs. The ideal situation is the metal-insulator transition together with the magnetization reversal of one magnetic lead. In this work, we will show that this can be achieved using a two-dimensional ferromagnetic zigzag SiC nanoribbon junction based on quantum transport calculations performed with a combination of density functional theory and non-equilibrium Green's function. Specifically, with the magnetization configuration switching of the two leads from parallel to anti-parallel, the junction will change abruptly from a conducting state to an insulating state, although the two leads are always metallic, with both spin up and spin down channels crossing the Fermi level simultaneously. Extensive analysis indicates that the insulating state in the anti-parallel magnetic configuration originates not from any present mechanisms that cause full suppression of electron transmission but from momentum direction mismatching. This finding suggests a fantastic mechanism for achieving magnetoresistance or electrical switching in nanoscale devices by manipulating band dispersion.

Near-Infrared Broadband ZnTa2O6:Cr3+ Phosphor for pc-LEDs and Its Application to Nondestructive Testing.

Broadband near-infrared (NIR) phosphors are necessary materials for developing portable NIR light sources. Moreover, exploiting an NIR phosphor with a main peak located beyond a wavelength of 900 nm remains a challenge because this spectral range has great potential in biological nondestructive testing and solution testing. In this study, a range of Cr3+-doped ZnTa2O6 (ZTO) phosphors were completely synthesized by a solid-state method, which show broadband Cr3+ emission centered at 935 nm with a large full width at half maximum (FWHM) of 185 nm due to two distorted octahedral sites. A packaged phosphor-converted light-emitting diode (pc-LED) device is used to penetrate a 5-cm-thick chicken breast and identify diverse solutions based on differences in the measured transmission spectra. The results indicate broad application prospects in the field of biological tissue penetration and solution analysis.

On-Surface Synthesis of [3]Radialenes via [1+1+1] Cycloaddition.

[3]Radialenes are the smallest carbocyclic structures with unusual topologies and cross-conjugated π-electronic structures. Here, we report a novel [1+1+1] cycloaddition reaction for the synthesis of aza[3]radialenes on the Ag(111) surface, where the steric hindrance of the chlorine substituents guides the selective and orientational assembling of the isocyanide precursors. By combining scanning tunneling microscopy, non-contact atomic force microscopy, and time-of-flight secondary ion mass spectrometry, we determined the atomic structure of the produced aza[3]radialenes. Furthermore, two reaction pathways including synergistic and stepwise are proposed based on density functional theory calculations, which reveal the role of the chlorine substituents in the activation of the isocyano groups via electrostatic interaction.

Ladder Phenylenes Synthesized on Au(111) Surface via Selective [2+2] Cycloaddition.

Ladder phenylenes (LPs) composed of alternating fused benzene and cyclobutadiene rings have been synthesized in solution with a maximum length no longer than five units. Longer polymeric LPs have not been obtained so far because of their poor stability and insolubility. Here, we report the synthesis of linear LP chains on the Au(111) surface via dehalogenative [2+2] cycloaddition, in which the steric hindrance of the methyl groups in the 1,2,4,5-tetrabromo-3,6-dimethylbenzene precursor improves the chemoselectivity as well as the orientation orderliness. By combining scanning tunneling microscopy and noncontact atomic force microscopy, we determined the atomic structure and the electronic properties of the LP chains on the metallic substrate and NaCl/Au(111). The tunneling spectroscopy measurements revealed the charged state of chains on the NaCl layer, and this finding is supported by density functional theory calculations, which predict an indirect bandgap and antiferromagnetism in the polymeric LP chains.

CNSi/MXene/CNSi: Unique Structure with Specific Electronic Properties for Nanodevices.

2D materials have been interesting for applications into nanodevices due to their intriguing physical properties. In this work, four types of unique structures are designed that are composed of MXenes and C/N-Si layers (CNSi), where MXene is sandwiched by the CNSi layers with different thicknesses, for their practical applications into integrated devices. The systematic calculations on their elastic constants, phonon dispersions, and thermodynamic properties show that these structures are stable, depending on the composition of MXene. It is found: 1) different from MXene or N-functionalized MXene (M2 CN2 ), SiN2 /M2 X/SiN2 possess new electronic properties with free carriers only in the middle, leading to 2D free electron gas; 2) CNSi/MXene/CNSi shows an intrinsic Ohmic semiconductor-metal-semiconductor (S-M-S) contact, which is potential for applications into nanodevices; and 3) O/M2 C/SiN2 and N/M2 C/OSiN are also stable and show different electronic properties, which can be semiconductor or metal as a whole depending on the interface. A method is further proposed to fabricate the 2D structures based on the industrial availability. The findings may provide a novel strategy to design and fabricate the 2D structures for their application into nanodevices and integrated circuits.

Strain-driven phase transition and spin polarization of Re-doped transition-metal dichalcogenides.

Two-dimensional transition metal dichalcogenides (TMDCs) are promising in spintronics due to their spin-orbit coupling, but their intrinsic non-magnetic properties limit their further development. Here, we focus on the energy landscapes of TMDC (MX2, M = Mo, W and X = S, Se, Te) monolayers by rhenium (Re) substitution doping under axial strains, which controllably drive 1H ↔ 1Td structural transformations. For both 1H and 1Td phases without strain, Re-doped TMDCs have an n-type character and are non-magnetic, but the tensile strain could effectively induce and modulate the magnetism. Specifically, 1H-Re0.5Mo0.5S2 gets a maximum magnetic moment of 0.69 µB at a 6% uniaxial tensile strain along the armchair direction; along the zigzag direction it exhibits a significant magnetic moment (0.49 µB) at a 2.04% uniaxial tensile strain but then exhibits no magnetism in the range of [5.10%, 7.14%]. By contrast, for 1Td-Re0.5Mo0.5S2 a critical uniaxial tensile strain along the zigzag direction reaches up to ∼9.18%, and a smaller uniaxial tensile strain (∼5.10%) along the zigzag direction is needed to induce the magnetism in 1Td-Re0.5M0.5Te2. The results reveal that the magnetism of Re-doped TMDCs could be effectively induced and modulated by the tensile strain, suggesting that strain engineering could have significant applications in doped TMDCs.

Electrical contacts to few-layer MoS2 with phase-engineering and metal intercalation for tuning the contact performance.

Due to Fermi-level pinning in metal-two-dimensional MoS2 junctions, improving the performance of MoS2-based electrical devices is still under extensive study. The device performance of few-layer MoS2 depends strongly on the number of layers. In this work, via density-functional theory calculations, a comprehensive understanding from the atomistic view was reached for the interlayer interaction between metal and few-layer MoS2 with phase-engineering and intercalation doping, which are helpful for improving the contact performance. These two methods are probed to tune the performance of few-layer MoS2-based field-effect transistors, and both of them can tune the Schottky barrier height. Phase-engineering, which means that the MoS2 layer in contact with metal is converted to the T phase, can transform the Schottky barrier from n- to p-type. Intercalation doping, which takes advantage of annealing and results in metal atom interaction in between MoS2 layers, makes the MoS2 layers become quasi-freestanding and converts the indirect bandgap into direct bandgap. Our atomistic insights help improve the performance of few-layer MoS2-based electronic devices.

Mechanism of charge redistribution at the metal-semiconductor and semiconductor-semiconductor interfaces of metal-bilayer MoS2 junctions.

Layer-number-dependent performance of metal-semiconductor junctions (MSJs) with multilayered two-dimensional (2D) semiconductors has attracted increasing attention for their potential in ultrathin electronics and optoelectronics. However, the mechanism of the interaction and the resulting charge transfer/redistribution at the two kinds of interfaces in MSJ with multilayered 2D semiconductors, namely, the metal-semiconductor (M-S) and the semiconductor-semiconductor (S-S) interfaces, have not been well understood until now, although that is important for the overall Schottky barrier height and the energy-band-offset between different layers of the 2D semiconductors. Here, based on state-of-the-art density functional theory calculations, the mechanisms of bonding and asymmetric electron redistribution at the M-S and S-S interfaces of metal-bilayer MoS2 junctions are revealed. Multiple mechanisms collectively contribute to the electron redistribution at the two kinds of interfaces, and the dominant mechanism depends on both the dimensionality (2D vs 3D) and the work function of metal electrodes. For the M-S interface, the pushback effect and metal-induced gap states play a dominant role for MSJs with 3D metal, while the covalent-like quasi-bonding feature appears for MSJs with medium-work-function 2D metals, and charge transfer plays a main role for MSJs with 2D metals that have very large or small work functions. For the S-S interface, it inherits the electron-redistribution behavior of the M-S interface for MSJs with 2D metal, while opposite electron-redistribution appears in MSJs with 3D metal. These mechanisms provide general insights and new concepts to better understand and use MSJs with multilayered 2D semiconductors.

Atomistic insights into the screening and role of oxygen in enhancing the Li+ conductivity of Li7P3S11-xOx solid-state electrolytes.

Herein, we implement first-principles calculations to design Li7P3S11-xOx at an atomic scale, aiming to obtain stable Li7P3S11-xOx-type solid electrolyte materials with good Li+ conductivity. After searching for chemical potentials, Li2O2 is expected to be the potential raw material, and it can afford the most favorable growth environment for the synthesis of Li7P3S11-xOx (x = 0.25, 0.50, 0.75 and 1). Among these compounds, it is found that Li7P3S10.25O0.75 exhibits the most desirable Li+ conductivity of 109 mS cm-1 at 300 K, which is far higher than that of Li7P3S11 (50 mS cm-1 at 300 K). By structural analysis, it is demonstrated that the Li diffusion pathway in Li7P3S10.25O0.75 is significantly broadened relative to that in Li7P3S11 (71.38 Å3vs. 69.48 Å3), which breaks the bottleneck during Li diffusion. Moreover, the resistance of Li ion diffusion in Li7P3S10.25O0.75 decreases due to the balance of interactions between Li and its neighbouring atoms at the transition state, which induces a much lesser energy barrier of Li7P3S10.25O0.75 than that of Li7P3S11 (0.20 eV vs. 0.31 eV). Moreover, introducing Li vacancies is unlikely to alter the essence of the inherent superionic conductivity of Li7P3S10.25O0.75. Furthermore, Li7P3S10.25O0.75 can maintain good thermal stability and similar electrochemical stability to Li7P3S11. This study successfully clarifies the role of oxygen in enhancing the Li+ conductivity of Li7P3S11-xOx. Moreover, it affords a new strategy to design other solid-state electrolytes with good Li+ conductivity.

Two-dimensional pentagonal CrX (X = S, Se or Te) monolayers: antiferromagnetic semiconductors for spintronics and photocatalysts.

Two dimensional (2D) materials with hexagonal building blocks have received tremendous interest in recent years and show promise as nanoscale devices for versatile applications. Herein, we propose a new family of 2D pentagonal CrX (X = S, Se or Te) monolayers (penta-CrX) for applications in electronics, spintronics and photocatalysis. We find that the 2D penta-CrX monolayers are thermally, structurally and mechanically stable. The penta-CrX monolayers are antiferromagnetic and semiconducting. We show that the magnetism is attributed to the super-exchange induced by the ionic interactions between the Cr and X atoms and can be enhanced upon applying tension. We further show that the penta-CrS and penta-CrSe monolayers show good redox potentials versus a normal hydrogen electrode, and their band gaps are comparable to the energy of a photon in the visible light region, indicating their capability of maximal utilization of solar energy for water splitting. With intrinsic semiconducting and controllable magnetic properties, the proposed penta-CrX monolayers may hold promise as flexible spintronics and photocatalysts.

Two-dimensional carbon dioxide with high stability, a negative Poisson's ratio and a huge band gap.

Carbon dioxide (CO2) normally exists in a gaseous molecular state under ambient conditions, while two-dimensional (2D) crystals of CO2 have not been reported yet. In this work, based on density functional theory and the particle swarm optimization method, we unveil two CO2 2D crystals with space groups of P4[combining macron]M2 and Amm2. Our results show that these structures have excellent thermal, dynamic, and mechanical stability. The new structures are insulators with an indirect or direct band gap, while the indirect band gap can be tuned to be direct with small uniaxial strains. More importantly, the P4[combining macron]M2 structure has an in-plane negative Poisson's ratio, which is due to the interaction of the lattice symmetry and the local CO4 tetrahedron symmetry. In addition, the Amm2 sheet has a very large electronic band gap (>9 eV), which is the largest in all known 2D materials. Enthalpy curves indicate that these 2D structures may be obtained from the ambient phase of CO2 under high pressure. This work presents new structures of CO2, and because of their excellent performance in terms of stability, mechanical and electronic properties, they potentially have broad applications.

Efficient nitrogen fixation to ammonia on MXenes.

Active catalysts for nitrogen fixation (N2-fixation) have been widely pursued through constant efforts for industrial applications. Here, we report a family of catalysts, MXenes (M2X: M = Mo, Ta, Ti, and W; X = C and N), for application in N2-fixation based on density functional theory calculations. We find that the catalytic performance of MXenes strongly depends on the reaction energy in each reaction step. More exothermic steps lead to higher catalytic performance in the course of N2-fixation. We show that the reaction energy in N2-fixation is strongly affected by the charge transfer: (1) if N atoms gain more electrons in a step, the reaction is exothermic with a larger reaction energy; (2) if N atoms lose electrons in a step, the reaction is endothermic in general. We further show that Mo2C and W2C are highly active for N2-fixation due to their exothermic reactions and strong charge transfer, which may be applicable in the chemical-engineering industry.

Fullerene/layered antiferromagnetic reconstructed spinterface: Subsurface layer dominates molecular orbitals' spin-split and large induced magnetic moment.

The interfaces between organic molecules and magnetic metals have gained increasing interest for both fundamental reasons and applications. Among them, the C60/layered antiferromagnetic (AFM) interfaces have been studied only for C60 bonded to the outermost ferromagnetic layer [S. L. Kawahara et al., Nano Lett. 12, 4558 (2012) and D. Li et al., Phys. Rev. B 93, 085425 (2016)]. Here, via density functional theory calculations combined with evidence from the literature, we demonstrate that C60 adsorption can reconstruct the layered-AFM Cr(001) surface at elevated annealing temperatures so that C60 bonds to both the outermost and the subsurface Cr layers in opposite spin directions. Surface reconstruction drastically changes the adsorbed molecule spintronic properties: (1) the spin-split p-d hybridization involves multi-orbitals of C60 and top two layers of Cr with opposite spin-polarization, (2) the subsurface Cr atom dominates the C60 electronic properties, and (3) the reconstruction induces a large magnetic moment of 0.58 µB in C60 as a synergistic effect of the top two Cr layers. The induced magnetic moment in C60 can be explained by the magnetic direct-exchange mechanism, which can be generalized to other C60/magnetic metal systems. Understanding these complex hybridization behaviors is a crucial step for molecular spintronic applications.

A new insight for ohmic contacts to MoS2: by tuning MoS2 affinity energies but not metal work-functions.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have recently attracted tremendous interest for fundamental studies and applications. High contact resistances between the metal electrodes and the 2D TMDCs, usually composed of a tunneling barrier (TB) and a Schottky barrier (SB), are the key bottleneck to the realization of high performance devices based on such systems. Here, from van der Waals density functional theory calculations, we demonstrate that strain can provide a feasible means to reduce the contact resistances between, for example, 2D semiconductor MoS2 and metal surfaces, in both strong and weak coupling regimes. Both the SB and TB are lowered significantly with the increasing tensile strain in both the coupling regimes. Especially, the SB can reduce to zero in all configurations considered, with tensile strain increasing to ∼4% or above. The mechanism of SB reduction under tensile strain is attributed to the increase of the MoS2 affinity energy since the monolayer MoS2 conduction band minimum (CBm) is derived from anti-bonding states. Thus, the SB in other semiconducting TMDCs with an anti-bonding CBm (for n-type contact) could also be reduced to zero by tensile strain. Our discoveries thus shed a new and general light on minimizing the contact resistance of semiconducting TMDCs-metal based contacts and this can also prove applicable to other 2D semiconductors, e.g. phosphorene.

N-Functionalized MXenes: ultrahigh carrier mobility and multifunctional properties.

Two dimensional (2D) nanomaterials have demonstrated huge potential in wide applications from nanodevices to energy harvesting/storage. In this work, we propose a new class of 2D monolayers, nitrogen-functionalized MXenes (Nb2CN2 and Ta2CN2), based on density-functional theory (DFT). We find that these monolayers are direct semiconductors with near linear energy dispersions at the Γ point. M2CN2 monolayers have significant small effective mass and show an ultra-high mobility of up to 106 cm2 V-1 s-1. We show that the electronic structures of the M2CN2 monolayers can be easily controlled by biaxial and uniaxial strains. Importantly, the carrier mobility and direct band gap can be dramatically increased within a certain range of strain. A direct-indirect band gap transition can be triggered and the band gap can be tuned under strain. The tunable electronic properties are attributed to the structural changes and charge redistribution under stain. Our findings demonstrate that N-functionalized MXenes are promising materials for nanodevices with high speed and low power.

Manipulating Magnetism at Organic/Ferromagnetic Interfaces by Molecule-Induced Surface Reconstruction.

Fullerenes have several advantages as potential materials for organic spintronics. Through a theoretical first-principles study, we report that fullerene C60 adsorption can induce a magnetic reconstruction in a Ni(111) surface and expose the merits of the reconstructed C60/Ni(111) spinterface for molecular spintronics applications. Surface reconstruction drastically modifies the magnetic properties at both sides of the C60/Ni interface. Three outstanding properties of the reconstructed structure are revealed, which originate from reconstruction enhanced spin-split π-d coupling between C60 and Ni(111): (1) the C60 spin polarization and conductance around the Fermi level are enhanced simultaneously, which can be important for read-head sensor miniaturization; (2) localized spin-polarized states appear in C60 with a spin-filter functionality; and (3) magnetocrystalline anisotropic energy and exchange coupling in the outermost Ni layer are reduced enormously. Surface reconstruction can be realized simply by controlling the annealing temperature in experiments.

Cooperative modulation of electronic structures of aromatic molecules coupled to multiple metal contacts.

We use cryogenic scanning tunneling microscopy and spectroscopy and density-functional theory calculations to inspect the modulation of electronic states of aromatic molecules. The molecules are self-assembled on a Cu(111) surface forming molecular networks in which the molecules are in different contact configurations, including laterally coupled to different numbers of coordination bonds and vertically adsorbed at different heights above the substrate. We quantitatively analyze the molecular states and find that a delocalized empty molecular state is modulated by these multiple contacts in a cooperative manner: its energy is down shifted by ∼ 0.16 eV for each additional lateral contact and by ∼ 0.1 eV as the vertical molecule-surface distance is reduced by 0.1 Šin the physisorption regime. We also report that in a molecule-metal-molecule system the bridging metal can mediate the electronic states of the two molecules.

A random rotor molecule: Vibrational analysis and molecular dynamics simulations.

Molecular structures that permit intramolecular rotational motion have the potential to function as molecular rotors. We have employed density functional theory and vibrational frequency analysis to study the characteristic structure and vibrational behavior of the molecule (4('),4("")-(bicyclo[2,2,2]octane-1,4-diyldi-4,1-phenylene)-bis-2,2('):6('),2(")-terpyridine. IR active vibrational modes were found that favor intramolecular rotation. To demonstrate the rotor behavior of the isolated single molecule, ab initio molecular dynamics simulations at various temperatures were carried out. This molecular rotor is expected to be thermally triggered via excitation of specific vibrational modes, which implies randomness in its direction of rotation.

MgF2:Mn2+: novel material with mechanically-induced luminescence.

Mechanoluminescent (ML) materials can directly convert external mechanical stimulation into light without the need for excitation from other forms of energy, such as light or electricity. This alluring characteristic makes ML materials potentially applicable in a wide range of areas, including dynamic imaging of force, advanced displays, information code, storage, and anti-counterfeiting encryption. However, current reproducible ML materials are restricted to sulfide- and oxide-based materials. In addition, most of the reported ML materials require pre-irradiation with ultraviolet (UV) lamps or other light sources, which seriously hinders their practical applications. Here, we report a novel ML material, MgF2:Mn2+, which emits bright red light under an external dynamic force without the need for pre-charging with UV light. The luminescence properties were systematically studied, and the piezophotonic application was demonstrated. More interestingly, unlike the well-known zinc sulfide ML complexes reported previously, a highly transparent ML film was successfully fabricated by incorporating MgF2:Mn2+ into polydimethylsiloxane (PDMS) matrices. This film is expected to find applications in advanced flexible optoelectronics such as integrated piezophotonics, artificial skin, athletic analytics in sports science, among others.