Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled.

In this study, we demonstrated the integration of black phosphorus (BP) nanoflakes in a resistive random access memory (RRAM) with a facile and complementary metal-oxide-semiconductor-compatible process. The solution-processed BP nanoflakes embedded in polystyrene (PS) as an active layer were sandwiched between aluminum electrodes (Al/BP:PS/Al). The device shows a figure of merit with typical bipolar behavior and forming-free characteristics as well as excellent memory performances such as nonvolatile, low operation voltage (1.75 V) and high ON/OFF ratio (>102) as well as the long retention time (>1500 s). The improved device performances were attributed to the formation of effective trap sites from the hybrid structure of the active layer (BP:PS), especially the BP nanoflakes and the partly oxidized species (P x O y ). Moreover, the extrinsic aluminum oxide layer was observed after the device operation. The mechanism of switching behavior was further unveiled through the carrier transport models, which confirms the conductive mechanisms of space-charge-limited current and Ohmic conductance at high resistance state (HRS) and low resistance state, respectively. Additionally, in the high electric field at HRS, the transfer curve was well fitted with the Poole-Frenkel emission model, which could be attributed to the formation of the aluminum oxide layer. Accordingly, both the trapping/de-trapping of carriers and the formation/rupture of conductive filaments were introduced as transport mechanisms in our devices. Although the partial P x O y species on BP were inevitable during the liquid phase exfoliation process, which was regarded as the disadvantages for various applications, it turns to a key point for improving performances in memory devices. The proposed approach to integrating BP nanoflakes in the active layer of the RRAM device could pave the way for next-generation memory devices.

Controlled multimodal hierarchically porous electrode self-assembly of electrochemically exfoliated graphene for fully solid-state flexible supercapacitor.

Supercapacitors constructed from three-dimensional (3D) graphene electrodes with high ion-accessible surface area and durable mechanical flexibility have great potential for wearable devices. For the development of a highly efficient graphene electrode for electrical double layer capacitors (EDLCs), proper control over not only the specific surface area but also the type of pore (macro-, meso- and micro-porous networks) adapted for an appropriate type of electrolyte is crucial to ensure an ideal performance in terms of both energy density and power delivery rate. However, there is still a lack of technology to create graphene structures that combine macro-, meso- and micro-pores by a one-step and facile method. In addition, the ion/electron transport of a solid state electrolyte among such multimodal pore structures is not fully investigated. Here, we report a novel cost-effective technique of concentration dependent self-assembly of electrochemically exfoliated graphene (EC-graphene) to obtain a 3D architecture with controllable macropores (0.39-4.99 µm) and multimodal hierarchical meso- and micro-pores. The better performance of the 3D architecture is obtained due to its optimum micron-sized macropore diameter (∼5 µm) that serves as an ion buffering reservoir, followed by facile ion diffusion kinetics through the well-modulated combination of macro-, meso- and micro-pores. The binder and conductive carbon additive free supercapacitor constructed from the 3D graphene electrode exhibited a specific capacitance of 45.40 F g-1 (6 M KOH) and 23.89 F g-1 (1 M H2SO4 gel electrolyte). A capacitance retention of above 90% (up to 180° folding angle) after 50 bending-relaxing cycles is obtained, implying the superior durability of the device and the worthiness of the synthesis procedure. The method reported here may pave the way for the development of an environment friendly, large scale producible and controlled porous graphene-based architecture for the high performance next generation flexible, all-solid-state and binder-free energy storage devices.

One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film.

In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF4 plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (<200 °C) while defect formation was suppressed by screening out the effect of ion damage. The chemical structure of the C-F bonds is well correlated with their optical and electrical properties in fluorinated graphene, as determined by X-ray photoelectron spectroscopy, Raman spectroscopy, and optical and electrical characterizations. The electrical conductivity of the resultant fluorinated graphene (F-graphene) was demonstrated to be in the range between 1.6 kΩ/sq and 1 MΩ/sq by adjusting the stoichiometric ratio of C/F in the range between 27.4 and 5.6, respectively. Moreover, a unique heterojunction structure of semi-metal/semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale.

Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide.

Multiterminal memtransistors made from two-dimensional (2D) materials have garnered increasing attention in the pursuit of low-power heterosynaptic neuromorphic circuits. However, existing 2D memtransistors tend to necessitate high set voltages (>1 V) or feature defective channels, posing concerns regarding material integrity and intrinsic properties. Herein, we present a monocrystalline monolayer MoS2 memtransistor designed for operation within submicron regimes. Under reverse drain bias sweeps, our experiments reveal memristive behavior within the device, further controllable through modulation of the gate terminal. This controllability facilitates the consistent manifestation of multistate memory effects. Notably, the memtransistor behavior becomes more significant as the channel length diminishes, particularly with channel lengths below 1.6 µm, showcasing an increase in the switching ratio alongside a decrease in the set voltage with the decreasing channel length. Our optimized memtransistor demonstrates the ability to exhibit individual resistance states spanning 5 orders of magnitude, with switching drain voltages of approximately 0.05 V. To elucidate these findings, we investigate hot carrier effects and their interplay with oxide traps within the HfO2 dielectric. This work highlights the importance of memtransisor behavior in highly scaled 2D transistors, particularly those featuring low contact resistances. This understanding holds the potential to tailor memory characteristics essential for the development of energy-efficient neuromorphic devices.

Plasma-Driven Selenization for Electrical Property Enhancement in Janus 2D Materials.

The recent emergence of Janus 2D materials like SnSSe, derived from SnS2, reveals unique electrical and optical features, such as asymmetrical electronic structure, enhanced carrier mobility, and tunable bandgap. Previous theoretical studies have discuss the electronic properties of Janus SnSSe, but experimental evidence is limited. This study presents a two-step method for synthesizing Janus SnSSe, involving hydrogen plasma treatment and in situ selenization. Optimized conditions (38 W, 1.5 min, 250 °C) are determined using Raman spectroscopy and AFM analysis. XPS confirmed SnSSe's elemental composition, while KPFM reveals a significant reduction in the work function (from 5.26 down to 5.14 eV) for the first time, indicating asymmetrically induced n-type doping. Finally, field-effect transistors (FETs) derived from SnSSe exhibited significantly enhanced mobility and on-current, as well as n-type doping, compared to SnS2-based FETs. These findings lay a crucial foundation for developing high-performance 2D electronic and optoelectronic devices.

Role of HIF-1α-activated Epac1 on HSC-mediated neuroplasticity in stroke model.

Exchange protein activated by cAMP-1 (Epac1) plays an important role in cell proliferation, cell survival and neuronal signaling, and activation of Epac1 in endothelial progenitor cells increases their homing to ischemic muscles and promotes neovascularization in a model of hind limb ischemia. Moreover, upregulation of Epac1 occurs during organ development and in diseases such as myocardial hypertrophy, diabetes, and Alzheimer's disease. We report here that hypoxia upregulated Epac1 through HIF-1α induction in the CD34-immunosorted human umbilical cord blood hematopoietic stem cells (hUCB(34)). Importantly, implantation of hUCB(34) subjected to hypoxia-preconditioning (HP-hUCB(34)) improved stroke outcome, more than did implantation of untreated hUCB(34), in rodents subjected to cerebral ischemia, and this required Epac1-to-matrix metalloprotease (MMP) signaling. This improved therapeutic efficacy correlated with better engraftment and differentiation of these cells in the ischemic host brain. In addition, more than did implantation of untreated HP-hUCB(34), implantation of HP-hUCB(34) improved cerebral blood flow into the ischemic brain via induction of angiogenesis, facilitated proliferation/recruitment of endogenous neural progenitor cells in the ischemic brain, and promoted neurite outgrowth following cerebral ischemia. Consistent with our proposed role of Epac1-to-MMP signaling in hypoxia-preconditioning, the above mentioned effects of implanting HP-hUCB(34) could be abolished by pharmacological inhibition and genetic disruption/deletion of Epac1 or MMPs. We have discovered a HIF-1α-to-Epac1-to-MMP signaling pathway that is required for the improved therapeutic efficacy resulting from hypoxia preconditioning of hUCB(34) in vitro prior to their implantation into the host brain in vivo.

Inducible and constitutive HSP70s confer synergistic resistance against metabolic challenges.

Chaperonic proteins, including inducible HSP70 (HSP70i) and constitutive HSP70 (HSC70), have been implicated as essential players in the cellular adaptive protection. Ensuing studies demonstrated that overexpression of either protein individually protects against thermal and oxidative challenges. The present study aimed to determine whether a concurrent overexpression of both HSC70 and HSP70i confers a better metabolic protection than the expression of each protein alone. Using a rat heart-derived H9c2 cardiac myoblast cell line, we found that HSP70i was rapidly induced within 2-8h following a mild thermal preconditioning (43°C for 20 min) in both parental cells and an established H9/70c clonal sub-line overexpressing HSC70. The level of HSP70i protein in heat pretreated H9/70c clonal cells reached only 50% of that in heat pretreated H9c2 parental cells. Nevertheless, protection against lethal hyperthermia, menadione (an oxidant) and hydrogen peroxide (H(2)O(2)) exposure in the pretreated H9/70c clonal cells was significantly higher than the sum of protection afforded by the early induction of HSP70i in the pretreated parental cells and protection afforded by the pre-existing HSC70 in the H9/70c cells without preconditioning. Using dosimetric analysis, we also found that menadione resistance in the pretreated parental cells increased linearly with cellular HSP70i level (10-300 ng/mg total protein). However, the resistance in the pretreated H9/70c cells showed a biphasic relationship with cellular HSP70i level; when HSP70i concentration reached >250 ng/mg protein, survivability after menadione exposure was markedly enhanced. Similar results were observed in H9c2 cells genetically manipulated to overexpress both HSC70 and HSP70i. The survival benefit against lethal hyperthermia, oxidant treatment, and hypoxia/reoxygenation conferred by a concerted HSC70 and HSP70i overexpression was greater than the sum of benefits contributed by individual protein overexpression. Together, these findings suggest that HSC70 and HSP70i may complement each other in a synergistic manner to preserve cellular integrity during metabolic challenges.

Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates.

The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates. Spectroscopic and microscopic results reveal that the synthesized MoS(2) sheets are highly crystalline. The electron mobility of the bottom-gate transistor devices made of the synthesized MoS(2) layer is comparable with those of the micromechanically exfoliated thin sheets from MoS(2) crystals. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS(2) films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

Ultraclean and Facile Patterning of CVD Graphene by a UV-Light-Assisted Dry Transfer Method.

The synthesis of large-area graphene by the chemical vapor deposition (CVD) method is a mature technology; however, a transfer procedure is required to integrate CVD-grown graphene into a functional device. The reported methods for transferring graphene films cause different degrees of defects (cracking, rupture) and ion/polymer residues, which deteriorate or alter the electrical properties of as-grown graphene. Developing a reliable and fast transfer method that can maintain high-quality graphene remains a challenge. In this work, we employed UV light release tape (UV-RT) as the support layer to replace the frequently used thermal release tape (TRT) in a typical roll-to-roll dry transfer process. In this process, we used an easier-to-remove polymer as an adhesion layer to greatly reduce the strain and defects that occur during the transfer process. The cleanliness of graphene transferred by this method is above 99%, and the carrier mobility is 1.6 and 1.1 times higher than that obtained with conventional wet transfer and TRT transfer methods, respectively. UV illumination leads to facile and uniform release of the graphene film onto the target substrate, achieving one-step and selective patterning of graphene (feature size of <100 µm). The UV-assisted decomposition of the polymer molecular structure into small molecules enables a residue-free and ultraclean graphene surface. This proposed transfer method enables facile patterning of graphene and 2D films while maintaining high quality, which paves the way for versatile functional graphene applications.

Dual-mode frequency multiplier in graphene-base hot electron transistor.

Since quantum computers have been gradually introduced in countries around the world, the development of the many related quantum components that can operate independently of temperature has become more important for enabling mature products with low power dissipation and high efficiency. As an alternative to studying cryo-CMOSs (complementary metal-oxide-semiconductors) to achieve this goal, quantum tunneling devices based on 2D materials can be examined instead. In this work, a vertical graphene-based quantum tunneling transistor has been used as a frequency modulator. The transistor can operate via different quantum tunneling mechanisms and generates, by applying the appropriate bias, voltage-resistance curves characteristic of variable nonlinear resistance for both base and emitter voltages. We experimentally demonstrate frequency modulation from input signals over the range of 100 kHz to 10 MHz, enabling a tunable frequency doubler or tripler in just a single transistor. This frequency multiplication with a tunneling mechanism makes the graphene-based tunneling device a promising option for frequency electronics in the emerging field of quantum technologies.

Self-powered broadband photodetection enabled by facile CVD-grown MoS2/GaN heterostructures.

Achieving self-powered photodetection without biasing is a notable challenge for photodetectors. In this work, we demonstrate the successful fabrication of large-scale van der Waals epitaxial molybdenum disulfide (MoS2) on a p-GaN/sapphire substrate using a straightforward chemical vapor deposition (CVD) technique. Our research primarily centers on the characterization of these photodetectors produced through this method. The MoS2/GaN heterojunction photodetector showcases a broad and extensive photoresponse spanning from ultraviolet A (UVA) to near-infrared (NIR). When illuminated by a 532 nm laser, its self-powered photoresponse is characterized by a rise time (τr) of ∼18.5 ms and a decay time (τd) of ∼123.2 ms. The photodetector achieves a responsivity (R) of ∼0.13 A W-1 and a specific detectivity (D*) of ∼3.8 × 1010 Jones at zero bias. Additionally, while utilizing a 404 nm laser, the photodetector reaches a maximum R and D* of ∼1.7 × 104 A/W and ∼1.6 × 1013 Jones, respectively, at Vb = 5 V. The operational mechanism of the device can be explained by the diode characteristics involving a tunneling current in the presence of reverse bias. The exceptional performance of these photodetectors can be attributed to the pristine interface between the CVD-grown MoS2 and GaN, providing an impeccably clean tunneling surface. Additionally, our investigation has unveiled that MoS2/GaN heterostructure photodetectors, featuring MoS2 coverage percentages spanning from 20% to 50%, exhibit improved responsivity capabilities at an external bias voltage. As a result, this facile CVD growth technique for MoS2 photodetectors holds significant potential for large-scale production in the manufacturing industry.

Electrical probing of submicroliter liquid using graphene strip transistors built on a nanopipette.

Graphene sheets made by chemical vapor deposition are transferred onto a glass nanopipette to form graphene strips. Two strips are connected at the nanopipette tip end to form a transistor channel. This graphene-based transistor can be operated in a liquid-gating condition, thereby allowing the electrical detection of the pH value of a droplet with submicroliter volume.

Converting graphene oxide monolayers into boron carbonitride nanosheets by substitutional doping.

To realize graphene-based electronics, bandgap opening of graphene has become one of the most important issues that urgently need to be addressed. Recent theoretical and experimental studies show that intentional doping of graphene with boron and nitrogen atoms is a promising route to open the bandgap, and the doped graphene might exhibit properties complementary to those of graphene and hexagonal boron nitride (h-BN), largely extending the applications of these materials in the areas of electronics and optics. This work demonstrates the conversion of graphene oxide nanosheets into boron carbonitride (BCN) nanosheets by reacting them with B(2) O(3) and ammonia at 900 to 1100 °C, by which the boron and nitrogen atoms are incorporated into the graphene lattice in randomly distributed BN nanodomains. The content of BN in BN-doped graphene nanosheets can be tuned by changing the reaction temperature, which in turn affects the optical bandgap of these nanosheets. Electrical measurements show that the BN-doped graphene nanosheet exhibits an ambipolar semiconductor behavior and the electrical bandgap is estimated to be ≈25.8 meV. This study provides a novel and simple route to synthesize BN-doped graphene nanosheets that may be useful for various optoelectronic applications.

Stable mode-locked fiber laser based on CVD fabricated graphene saturable absorber.

A stable mode-locked fiber laser (MLFL) employing multi-layer graphene as saturable absorber (SA) is presented. The multi-layer graphene were grown by chemical vapor deposition (CVD) on Ni close to A-A stacking. Linear absorbance spectrum of multi-layer graphene was observed without absorption peak from 400 to 2000 nm. Optical nonlinearities of different atomic-layers (7-, 11-, 14-, and 21- layers) graphene based SA are investigated and compared. The results found that the thicker 21-layer graphene based SA exhibited a smaller modulation depth (MD) value of 2.93% due to more available density of states in the band structure of multi-layer graphene and favored SA nonlinearity. A stable MLFL of 21-layer graphene based SA showed a pulsewidth of 432.47 fs, a bandwidth of 6.16 nm, and a time-bandwidth product (TBP) of 0.323 at fundamental soliton-like operation. This study demonstrates that the atomic-layer structure of graphene from CVD process may provide a reliable graphene based SA for stable soliton-like pulse formation of the MLFL.

Analysis of flavonoids by graphene-based surface-assisted laser desorption/ionization time-of-flight mass spectrometry.

Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF MS) is a simple and fast technique for the analysis of large biomolecules but is not suitable for the detection of low molecular weight molecules and compounds, such as flavonoids and phenylpropanoids, mainly due to the lack of an appropriate matrix. Flavonoids and phenylpropanoids, such as coumarin and its derivatives, have attracted much attention recently because of their pharmacological activities and putative therapeutic benefits. In this study, we developed a quick and simple LDI-TOF MS method for the detection of flavonoids and the derivatives of coumarin. Analytes were spotted onto a matrix of graphene-based nanoparticles and then analyzed by LDI-TOF MS in the negative ion mode. Analysis of the sensitivity and effect of different graphene-based nanoparticles including graphene, graphene oxide, and reduced graphene oxide on desorption/ionization of analytes showed that graphene oxide was the most suitable matrix. Moreover, we found that graphene oxide sheets of larger lateral size resulted in better desorption/ionization efficiency. Overall, we show that graphene oxide is a useful matrix for the analysis of flavonoids and the derivatives of coumarin by LDI-TOF MS in the negative ion mode.

Direct synthesis of platelet graphitic-nanofibres as a highly porous counter-electrode in dye-sensitized solar cells.

We synthesized platelet graphitic-nanofibres (GNFs) directly onto FTO glass and applied this forest of platelet GNFs as a highly porous structural counter-electrode in dye-sensitized solar cells (DSSCs). We investigated the electrochemical properties of counter-electrodes made from the highly porous structural GNFs and the photoconversion performance of the cells made with these electrodes.

Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition.

Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO(2) is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.

Laser-Induced Graphene Stretchable Strain Sensor with Vertical and Parallel Patterns.

In intelligent manufacturing and robotic technology, various sensors must be integrated with equipment. In addition to traditional sensors, stretchable sensors are particularly attractive for applications in robotics and wearable devices. In this study, a piezoresistive stretchable strain sensor based on laser-induced graphene (LIG) was proposed and developed. A three-dimensional, porous LIG structure fabricated from polyimide (PI) film using laser scanning was used as the sensing layer of the strain sensor. Two LIG pattern structures (parallel and vertical) were fabricated and integrated within the LIG strain sensors. Scanning electron microscopy, an X-ray energy dispersive spectrometer, and Raman scattering spectroscopy were used to examine the microstructure of the LIG sensing layer. The performance and strain sensing properties of the parallel and vertical stretchable LIG strain sensors were investigated in tensile tests. The relative resistance changes and the gauge factors of the parallel and vertical LIG strain sensors were quantified. The parallel strain sensor achieved a high gauge factor of 15.79 in the applied strain range of 10% to 20%. It also had high sensitivity, excellent repeatability, good durability, and fast response times during the tensile experiments. The developed LIG strain sensor can be used for the real-time monitoring of human motions such like finger bending, wrist bending, and throat swallowing.

Secretoneurin promotes neuroprotection and neuronal plasticity via the Jak2/Stat3 pathway in murine models of stroke.

Secretoneurin (SN), a neuropeptide derived from secretogranin II, promotes neurite outgrowth of immature cerebellar granule cells. SN also aids in the growth and repair of neuronal tissue, although the precise mechanisms underlying the promotion of brain tissue neuroprotection and plasticity by SN are not understood. Here, in a rat model of stroke and in ischemic human brain tissue, SN was markedly upregulated in both neurons and endothelial cells. SN-mediated neuroprotection rescued primary cortical cell cultures from oxygen/glucose deprivation. SN also induced expression of the antiapoptotic proteins Bcl-2 and Bcl-xL through the Jak2/Stat3 pathway and inhibited apoptosis by blocking caspase-3 activation. In addition, rats with occluded right middle cerebral arteries showed less cerebral infarction, improved motor performance, and increased brain metabolic activity following i.v. administration of SN. Furthermore, SN injection enhanced stem cell targeting to the injured brain in mice and promoted the formation of new blood vessels to increase local cortical blood flow in the ischemic hemisphere. Both in vitro and in vivo, SN not only promoted neuroprotection, but also enhanced neurogenesis and angiogenesis. Our results demonstrate that SN acts directly on neurons after hypoxia and ischemic insult to further their survival by activating the Jak2/Stat3 pathway.

Implantation of olfactory ensheathing cells promotes neuroplasticity in murine models of stroke.

Murine olfactory ensheathing cells (OECs) promote central nervous system axonal regeneration in models of spinal cord injury. We investigated whether OECs could induce a neuroplastic effect to improve the neurological dysfunction caused by hypoxic/ischemic stress. In this study, human OECs/olfactory nerve fibroblasts (hOECs/ONFs) specifically secreted trophic factors including stromal cell-derived factor-1alpha (SDF-1alpha). Rats with intracerebral hOEC/ONF implantation showed more improvement on behavioral measures of neurological deficit following stroke than control rats. [18F]fluoro-2-deoxyglucose PET (FDG-PET) showed increased glucose metabolic activity in the hOEC/ONF-treated group compared with controls. In mice, transplanted hOECs/ONFs and endogenous homing stem cells including intrinsic neural progenitor cells and bone marrow stem cells colocalized with specific neural and vascular markers, indicating stem cell fusion. Both hOECs/ONFs and endogenous homing stem cells enhanced neuroplasticity in the rat and mouse ischemic brain. Upregulation of SDF-1alpha and CXCR4 in hOECs/ONFs promoted neurite outgrowth of cocultured primary cortical neurons under oxygen glucose deprivation conditions and in stroke animals through upregulation of cellular prion protein (PrP C) expression. Therefore, the upregulation of SDF-1alpha and the enhancement of CXCR4 and PrP C interaction induced by hOEC/ONF implantation mediated neuroplastic signals in response to hypoxia and ischemia.