Mineralization of Poly(vinyl alcohol) by Ozone Microbubbles under a Wide Range of pH Conditions.

Poly(vinyl alcohol) (PVA) is a well-known recalcitrant pollutant that threatens ecological systems and human health. In this study, ozone-microbubble treatment was evaluated as a physicochemical method to mineralize PVA in solution for wastewater treatment. Microbubbles are very small bubbles (<50 µm in diameter) and shrink in water because of the rapid dissolution of the interior gas. Ozone microbubbles were generated by a hybrid microbubble generator in PVA solutions with pH conditions of 2, 7, and 10. Ordinary ozone bubbling was also performed as control tests. The change in the total-organic-carbon content was measured to evaluate the efficiency of the system for wastewater treatment. Ordinary ozone bubbling was not able to mineralize aqueous PVA solutions under nonalkaline conditions, and approximately 30% of the total organic carbon remained at pH 2 and 7. Conversely, ozone microbubbles effectively mineralized PVA in aqueous solution to almost 0% in total organic carbon regardless of the pH condition. Effective mineralization of PVA, a recalcitrant organic chemical, demonstrates the potential of ozone-microbubble systems for physicochemical wastewater treatment.

Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution.

This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 µm pitch pixels with a large detection area of 1.68 cm2; Chip B with 2.8 µm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF (10-19 F) at an input voltage of 20 V and less than 10 zF (10-20 F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of up to 123 dB was achieved. The spatial resolution improvement was confirmed by the experimentally obtained modulation transfer function for Chip B with various line and space pattens. The examples of capacitance imaging using the fabricated chips were also demonstrated.

Free-Radical Generation from Bulk Nanobubbles in Aqueous Electrolyte Solutions: ESR Spin-Trap Observation of Microbubble-Treated Water.

Microbubbles are very fine bubbles that shrink and collapse underwater within several minutes, leading to the generation of free radicals. Electron spin resonance spectroscopy (ESR) confirmed the generation of hydroxyl radicals under strongly acidic conditions. The drastic environmental change caused by the collapse of the microbubbles may trigger radical generation via the dispersion of the elevated chemical potential that had accumulated around the gas-water interface. The present study also confirmed the generation of ESR signals from the microbubble-treated waters even after several months had elapsed following the dispersion of the microbubbles. Bulk nanobubbles were expected to be the source of the spin-adducts of hydroxyl radicals. Such microbubble stabilization and conversion might be caused by the formation of solid microbubble shells generated by iron ions in the condensed ionic cloud around the microbubble. Therefore, the addition of a strong acid might cause drastic changes in the environment and destroy the stabilized condition. This would restart the collapsing process, leading to hydroxyl radical generation.

Over 100 Million Frames per Second 368 Frames Global Shutter Burst CMOS Image Sensor with Pixel-wise Trench Capacitor Memory Array.

In this paper, a prototype ultra-high speed global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with pixel-wise trench capacitor memory array achieving over 100 million frames per second (fps) with up to 368 record length by burst correlated double sampling (CDS) operation is presented. Over 100 Mfps high frame rate is obtained by reduction of pixel output load by the pixel-wise memory array architecture and introduction of the burst CDS operation which minimizes the pixel driving pulse transitions. Long record length is realized by high density analog memory integration with Si trench capacitors. A maximum 125 Mfps frame rate with up to 368 record length video capturing was confirmed under room temperature without any cooling system. The photoelectric conversion characteristics of the burst CDS operation were measured and compared with those of the conventional CDS operation.

An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging.

This paper presents a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) capable of capturing UV-selective and visible light images simultaneously by a single exposure and without employing optical filters, suitable for applications that require simultaneous UV and visible light imaging, or UV imaging in variable light environment. The developed CIS is composed by high and low UV sensitivity pixel types, arranged alternately in a checker pattern. Both pixel types were designed to have matching sensitivities for non-UV light. The UV-selective image is captured by extracting the differential spectral response between adjacent pixels, while the visible light image is captured simultaneously by the low UV sensitivity pixels. Also, to achieve high conversion gain and wide dynamic range simultaneously, the lateral overflow integration capacitor (LOFIC) technology was introduced in both pixel types. The developed CIS has a pixel pitch of 5.6 µm and exhibits 172 µV/e- conversion gain, 131 ke- full well capacity (FWC), and 92.3 dB dynamic range. The spectral sensitivity ranges of the high and low UV sensitivity pixels are of 200-750 nm and 390-750 nm, respectively. The resulting sensitivity range after the differential spectral response extraction is of 200-480 nm. This paper presents details regarding the CIS pixels structures, doping profiles, device simulations, and the measurement results for photoelectric response and spectral sensitivity for both pixel types. Also, sample images of UV-selective and visible spectral imaging using the developed CIS are presented.

A Highly Robust Silicon Ultraviolet Selective Radiation Sensor Using Differential Spectral Response Method.

This paper presents a silicon ultraviolet radiation sensor with over 90% UV internal quantum efficiency (QE) and high selectivity to the UV waveband without using optical filters. The sensor was developed for applications that require UV measurement under strong background visible and near-infrared (NIR) lights, such as solar UV measurement, UV-C monitoring in greenhouses or automated factories, and so on. The developed sensor is composed of monolithically formed silicon photodiodes with different spectral sensitivities: a highly UV responsive photodiode with internal quantum efficiency (QE) of nearly 100% for UV light, and a lowly UV responsive photodiode with UV internal QE lower than 10%. The photodiodes were optimized to match their visible and NIR light responsivity, and the UV signal is extracted from the background radiation by using the differential spectral response method. With this approach, an internal QE of over 90% for UV light was obtained, with a residual internal QE to non-UV light lower than 20% for 400 nm, 5% for 500 nm, 2% for 600 nm and 0.6% to NIR light. The developed sensor showed no responsivity degradation after exposure towards strong UV light. It was confirmed by the simulation results that the residual responsivity is further suppressed by employing an on-chip band-rejection optical layer consisting of several layers of silicon oxide and silicon nitride films.

A 120-ke- Full-Well Capacity 160-µV/e- Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor.

In this paper, a prototype complementary metal-oxide-semiconductor (CMOS) image sensor with a 2.8-µm backside-illuminated (BSI) pixel with a lateral overflow integration capacitor (LOFIC) architecture is presented. The pixel was capable of a high conversion gain readout with 160 µV/e- for low light signals while a large full-well capacity of 120 ke- was obtained for high light signals. The combination of LOFIC and the BSI technology allowed for high optical performance without degradation caused by extra devices for the LOFIC structure. The sensor realized a 70% peak quantum efficiency with a normal (no anti-reflection coating) cover glass and a 91% angular response at ±20° incident light. This 2.8-µm pixel is potentially capable of higher than 100 dB dynamic range imaging in a pure single exposure operation.

Nanoshell Formation at the Electrically Charged Gas-Water Interface of Collapsing Microbubbles: Insights from Atomic Force Microscopy Imaging.

AFM imaging has revealed intriguing features when bulk nanobubbles were deposited on a positively charged substrate. Numerous spherical objects, each less than 20 nm in diameter, were observed on the substrate. These objects were adorned with noticeable, tiny protrusions, each measuring a few nanometers. These findings suggest the presence of solid shells contributing to the stability of the gas bodies. Furthermore, electrically charged microbubbles appear to play a critical role in the formation of these solid shells. The collapse of microbubbles in an electrolyte aqueous solution containing iron ions leads to a condensing ionic cloud, creating conditions necessary for solid nucleation at the interface. At the end of the collapsing process, concurrent multinucleation may result in the deposition of solid material on the interface, forming solid shells with specific structures on the surfaces. This study illuminates the phenomenon of electrically charged gas-water interfaces during microbubble collapse and highlights the generation of stabilized nanoshells in aqueous solutions without the need for chemical stabilizers.

Accelerated germination of aged recalcitrant seeds by K+-rich bulk oxygen nanobubbles.

Bulk nanobubbles, measuring less than 200 nm in water, have shown their salient properties in promoting growth in various species of plants and orthodox seeds, and as potential drug-delivery carriers in medicine. Studies of recalcitrant seeds have reported markedly increased germination rates with gibberellin treatment; however, neither the mechanism promoting germination nor the implication for food safety is well elucidated. In our study, recalcitrant wasabi (Eutrema japonicum) seeds treated with bulk oxygen nanobubbles (BONB) containing K+, Na+, and Cl- (BONB-KNaCl) showed significantly accelerated germination. As germination progressed, 99% of K+ ions in the BONB-KNaCl medium were absorbed by the seeds, whereas Ca2+ ions were released. These results suggest that the germination mechanism involves the action of K+ channels for migration of K+ ions down their concentration gradient and Ca2+ pumps for the movement of Ca2+ ions, the first potential discovery in germination promotion in recalcitrant seeds using nutrient solutions with BONB-KNaCl.

Mirror-field confined compact plasma source using permanent magnet for plasma processings.

A mirror-field confined compact electron cyclotron resonance (ECR) plasma source using permanent magnets was developed, aiming for the realization of high-quality plasma processings where high-density reactive species are supplied to a substrate with minimizing the ion bombardment damages. The ECR position was located between a microwave transmissive window and a quartz limiter, and plasmas were transported from the ECR position to a midplane of the magnetic mirror field through the quartz limiter. Thus, a radius of core plasma could be determined by the limiter, which was 15 mm in this study. Plasma parameters were investigated by the Langmuir probe measurement. High-density plasma larger than 1011 cm-3 could be produced by applying 5.85-GHz microwave power of 10 W or more. For the outside region of the core plasma where a wafer for plasma processings will be set at, the ion current density was decreased dramatically with distance from the core plasma and became smaller by approximately two orders of magnitude that in the core plasma region for the radial position of 40 mm, suggesting the realization of reduction in ion bombardment damages.