Output Power Limitations and Improvements in Passively Mode Locked GaAs/AlGaAs Quantum Well Lasers.

We report a novel approach for increasing the output power in passively mode locked semiconductor lasers. Our approach uses epitaxial structures with an optical trap in the bottom cladding that enlarges the vertical mode size to scale the pulse saturation energy. With this approach we demonstrate a very high peak power of 9.8 W per facet, at a repetition rate of 6.8 GHz and with pulse duration of 0.71 ps. In particular, we compare two GaAs/AlGaAs epilayer designs, a double quantum well design operating at 830 nm and a single quantum well design operating at 795 nm, with vertical mode sizes of 0.5 and 0.75 µm, respectively. We show that a larger mode size not only shifts the mode locking regime of operation towards higher powers, but also produces other improvements in respect of two main failure mechanisms that limit the output power: the catastrophic optical mirror damage and the catastrophic optical saturable absorber damage. For the 830 nm material structure, we also investigate the effect of non-absorbing mirrors on output power and mode locked operation of colliding pulse mode locked lasers.

Picosecond ultrasonics with miniaturized semiconductor lasers.

There is a great desire to extend ultrasonic techniques to the imaging and characterization of nanoobjects. This can be achieved by picosecond ultrasonics, where by using ultrafast lasers it is possible to generate and detect acoustic waves with frequencies up to terahertz and wavelengths down to nanometers. In our work we present a picosecond ultrasonics setup based on miniaturized mode-locked semiconductor lasers, whose performance allows us to obtain the necessary power, pulse duration and repetition rate. Using such a laser, we measure the ultrasonic echo signal with picosecond resolution in a 112 nm thick Al film deposited on a semiconductor substrate. We show that the obtained signal is as good as the signal obtained with a standard bulky mode-locked Ti-Sa laser. The experiments pave the way for designing integrated portable picosecond ultrasonic setups on the basis of miniaturized semiconductor lasers.