RESUMEN
The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D Ta2NiSe5 and the topological insulator Bi2Se3, where the configuration enables polarization-sensitive, wide-spectral-range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self-powered responsivity of 0.48 A·W-1, a specific directivity of 3.8 × 1011 cm·Hz1/2·W-1, a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared-coded communication and dual-channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room-temperature infrared detectors with superior performance metrics and enhanced capabilities for multi-information acquisition.
RESUMEN
Terahertz detection has been highly sought to open a range of cutting-edge applications in biomedical, high-speed communications, astronomy, security screening, and military surveillance. Nonetheless, these ideal prospects are hindered by the difficulties in photodetection featuring self-powered operation at room temperature. Here, this challenge is addressed for the first time by synthesizing the high-quality ZrGeSe with extraordinary quantum properties of Dirac nodal-line semimetal. Benefiting from its high mobility and gapless nature, a metal-ZrGeSe-metal photodetector with broken mirror symmetry allows for a high-efficiency photoelectric conversion assisted by the photo-thermoelectric effect. The designed architecture features ultrahigh sensitivity, excellent ambient stability, and an efficient rectified signal even above 0.26 THz. Maximum responsivity larger than 0.11 A W-1 , response time of 8.3 µs, noise equivalent power (NEP) less than 0.15 nW Hz-1/2 , and demonstrative imaging application are all achieved. The superb performances with a lower dark current and NEP less than 15 pW Hz-1/2 are validated through integrating the van der Waals heterostructure. These results open up an appealing perspective to explore the nontrivial topology of Dirac nodal-line semimetal by devising the peculiar device geometry that allows for a novel roadmap to address targeted terahertz application requirements.