New magneto-polaron resonances in a monolayer of a transition metal dichalcogenide.

Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potential for the future of nano-optics and nano-optoelectronics as well as the rich and exciting development of basic research. The influence of an external magnetic field on a TMD monolayer raises a new question: to unveil the behavior of the magneto-polaron resonances (MPRs) associated with the phonon symmetry inherent in the system. It is shown that the renormalized Landau energy levels are modified by the interplay of the long-range Pekar-Fröhlich (PF) and short-range deformation potential (DP) interactions. This leads to a new series of MPRs involving the optical phonons at the center of the Brillouin zone. The coupling of the two Landau levels with the LO and [Formula: see text] optical phonon modes provokes resonant splittings of double avoided-crossing levels giving rise to three excitation branches. This effect appears as bigger energy gaps at the anticrossing points in the renormalized Landau levels. To explore the interplay between the MPRs, the electron-phonon interactions (PF and DP) and the couplings between adjacent Landau levels, a full Green's function treatment for the evaluation of the energy and its life-time broadening is developed. A generalization of the two-level approach is performed for the description of the new MPR branches. The obtained results are a guideline for the magneto-optical experiments in TMDs, where three MPR peaks should be observable.

Voltage-driven ring confinement in a graphene sheet: assessing conditions for bound state solutions.

We have systematically studied the single-particle states in quantum rings produced by a set of concentric circular gates over a graphene sheet placed on a substrate. The resulting potential profiles and the interaction between the graphene layer and the substrate are considered within the Dirac Hamiltonian in the framework of the envelope function approximation. Our simulations allow microscopic mapping of the character of the electron and hole quasi-particle solutions according to the applied voltage. General conditions to control and operate the bound state solutions are described as functions of external and controllable parameters that will determine the optical properties ranging from metallic to semiconductor phases. Contrasting behaviors are obtained when comparing the results for repulsive and attractive voltages as well as for variation of the relative strength of the graphene-substrate coupling parameter.

Variational calculation of the lowest exciton states in phosphorene and transition metal dichalcogenides.

Several transition metal dichalcogenides (TMDs) can be exfoliated to produce nearly two-dimensional (2D) semiconductor layers supporting robust excitons with non-hydrogenic Rydberg series of states. Black phosphorus (BP) can also be layered to create a nearly 2D material with interesting properties including its pronounced in-plane anisotropy that influences, in particular, exciton states making them different from those in other 2D semiconductors. We apply the Rayleigh-Ritz variational method to evaluate the energies and approximate the wavefunctions of the ground and lowest excited states of the exciton in a 2D semiconductor with anisotropic effective masses of electrons and holes. The electron-hole interaction is described by the Rytova-Keldysh potential, which is considered beyond the standard zero-thickness approximation. The exciton binding energies calculated for BP and TMD (molybdenum disulphide and tungsten disulphide) monolayers are compared with previously published data.