High efficiency near diffraction-limited mid-infrared flat lenses based on metasurface reflectarrays.

We report the first demonstration of a mid-IR reflection-based flat lens with high efficiency and near diffraction-limited focusing. Focusing efficiency as high as 80%, in good agreement with simulations (83%), has been achieved at 45° incidence angle at λ = 4.6 µm. The off-axis geometry considerably simplifies the optical arrangement compared to the common geometry of normal incidence in reflection mode which requires beam splitters. Simulations show that the effects of incidence angle are small compared to parabolic mirrors with the same NA. The use of single-step photolithography allows large scale fabrication. Such a device is important in the development of compact telescopes, microscopes, and spectroscopic designs.

High power spiral cavity quantum cascade superluminescent emitter.

Quantum Cascade devices with an emission wavelength centered around 5 µm have been shaped into compact, yet long (8 mm and 12 mm) spiral cavities to increase mid-infrared superluminescence (SL) power. Up to ~57 mW of SL power at 250 K is obtained with a Gaussian emission spectrum with a full width at half maximum of 56 cm(-1) and a coherence length of ~107 µm.

Wavelength selection and spectral narrowing of Distributed Bragg Reflector quantum cascade lasers up to peak optical power.

We investigate the impact of Distributed Bragg Reflectors (DBR), ion-milled directly on top of Fabry-Perot type Quantum Cascade (QC) laser ridges, following fabrication and processing of the devices and observe a more than 10-fold reduction in spectral full-width-half-maximum (FWHM) and a maximum of 20dB side-mode suppression ratio (SMSR), maintained to peak optical power. As predicted by our model, and experimentally verified, there is a "sweet-spot" in terms of grating length, ~200 µm on a 3 mm long laser ridge, and a trade-off between spectral narrowing and output power, set by the grating depth, varied from 1.8 to 2.5 µm.

Predicting early failure of quantum cascade lasers during accelerated burn-in testing using machine learning.

Device life time is a significant consideration in the cost of ownership of quantum cascade lasers (QCLs). The life time of QCLs beyond an initial burn-in period has been studied previously; however, little attention has been given to predicting premature device failure where the device fails within several hundred hours of operation. Here, we demonstrate how standard electrical and optical device measurements obtained during an accelerated burn-in process can be used in a simple support vector machine to predict premature failure with high confidence. For every QCL that fails, at least one of the measurements is classified as belonging to a device that will fail prematurely-as much as 200 h before the actual failure of the device. Furthermore, for devices that are operational at the end of the burn-in process, the algorithm correctly classifies all the measurements. This work will influence future device analysis and could lead to insights on the physical mechanisms of premature failure in QCLs.

Raman injection laser.

Stimulated Raman scattering is a nonlinear optical process that, in a broad variety of materials, enables the generation of optical gain at a frequency that is shifted from that of the incident radiation by an amount corresponding to the frequency of an internal oscillation of the material. This effect is the basis for a broad class of tunable sources known as Raman lasers. In general, these sources have only small gain (approximately 10(-9) cm W(-1)) and therefore require external pumping with powerful lasers, which limits their applications. Here we report the realization of a semiconductor injection Raman laser designed to circumvent these limitations. The physics underlying our device differs in a fundamental way from existing Raman lasers: it is based on triply resonant stimulated Raman scattering between quantum-confined states within the active region of a quantum cascade laser that serves as an internal optical pump--the device is driven electrically and no external laser pump is required. This leads to an enhancement of orders of magnitude in the Raman gain, high conversion efficiency and low threshold. Our lasers combine the advantages of nonlinear optical devices and of semiconductor injection lasers, and could lead to a new class of compact and wavelength-agile mid-and far-infrared light sources.

Broadly tunable monolithic room-temperature terahertz quantum cascade laser sources.

Electrically pumped room-temperature semiconductor sources of tunable terahertz radiation in 1-5 THz spectral range are highly desired to enable compact instrumentation for THz sensing and spectroscopy. Quantum cascade lasers with intra-cavity difference-frequency generation are currently the only room-temperature electrically pumped semiconductor sources that can operate in the entire 1-5 THz spectral range. Here we demonstrate that this technology is suitable to implementing monolithic room-temperature terahertz tuners with broadband electrical control of the emission frequency. Experimentally, we demonstrate ridge waveguide devices electrically tunable between 3.44 and 4.02 THz.

Quantum cascade surface-emitting photonic crystal laser.

We combine photonic and electronic band structure engineering to create a surface-emitting quantum cascade microcavity laser. A high-index contrast two-dimensional photonic crystal is used to form a micro-resonator that simultaneously provides feedback for laser action and diffracts light vertically from the surface of the semiconductor surface. A top metallic contact allows electrical current injection and provides vertical optical confinement through a bound surface plasmon wave. The miniaturization and tailorable emission properties of this design are potentially important for sensing applications, while electrical pumping can allow new studies of photonic crystal and surface plasmon structures in nonlinear and near-field optics.