Coexistence of Incoherent and Ultrafast Coherent Exciton Transport in a Two-Dimensional Superatomic Semiconductor.

Fully leveraging the remarkable properties of low-dimensional semiconductors requires developing a deep understanding of how their structure and disorder affect the flow of electronic energy. Here, we study exciton transport in single crystals of the two-dimensional superatomic semiconductor CsRe6Se8I3, which straddles a photophysically rich yet elusive intermediate electronic-coupling regime. Using femtosecond scattering microscopy to directly image exciton transport in CsRe6Se8I3, we reveal the rare coexistence of coherent and incoherent exciton transport, leading to either persistent or transient electronic delocalization depending on temperature. Notably, coherent excitons exhibit ballistic transport at speeds approaching an extraordinary 1600 km/s over 300 fs. Such fast transport is mediated by J-aggregate-like superradiance, owing to the anisotropic structure and long-range order of CsRe6Se8I3. Our results establish superatomic crystals as ideal platforms for studying the intermediate electronic-coupling regime in highly ordered environments, in this case displaying long-range electronic delocalization, ultrafast energy flow, and a tunable dual transport regime.

Room-temperature wavelike exciton transport in a van der Waals superatomic semiconductor.

The transport of energy and information in semiconductors is limited by scattering between electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails all semiconductor technologies. Using Re6Se8Cl2, a van der Waals (vdW) superatomic semiconductor, we demonstrate the formation of acoustic exciton-polarons, an electronic quasiparticle shielded from phonon scattering. We directly imaged polaron transport in Re6Se8Cl2 at room temperature, revealing quasi-ballistic, wavelike propagation sustained for a nanosecond and several micrometers. Shielded polaron transport leads to electronic energy propagation lengths orders of magnitude greater than in other vdW semiconductors, exceeding even silicon over a nanosecond. We propose that, counterintuitively, quasi-flat electronic bands and strong exciton-acoustic phonon coupling are together responsible for the transport properties of Re6Se8Cl2, establishing a path to ballistic room-temperature semiconductors.