RESUMEN
g-C3N4 is a promising material for hydrogen production from water via photo-catalysis, if we can tune its band gap to desirable levels. Using a combined experimental and ab initio approach, we uncover an almost perfectly linear relationship between the band gap and structural aspects of g-C3N4, which we show to originate in a changing overlap of wave functions associated with the lattice constants. This changing overlap, in turn, causes the unoccupied pz states to experience a significantly larger energy shift than any other occupied state (s, px, or py), resulting in this peculiar relationship. Our results explain and demonstrate the possibility to tune the band gap by structural means, and thus the frequency at which g-C3N4 absorbs light.
RESUMEN
Activation of molecular hydrogen is the first step in producing many important industrial chemicals that have so far required expensive noble-metal catalysts and thermal activation. We demonstrate here that aluminium doped with very small amounts of titanium can activate molecular hydrogen at temperatures as low as 90 K. Using an approach that uses CO as a probe molecule, we identify the atomistic arrangement of the catalytically active sites containing Ti on Al(111) surfaces, combining infrared reflection-absorption spectroscopy and first-principles modelling. CO molecules, selectively adsorbed on catalytically active sites, form a complex with activated hydrogen that is removed at remarkably low temperatures (115 K; possibly as a molecule). These results provide the first direct evidence that Ti-doped Al can carry out the essential first step of molecular hydrogen activation under nearly barrierless conditions, thereby challenging the monopoly of noble metals in hydrogen activation.
RESUMEN
Infrared (IR) absorption spectroscopy measurements of molecular hydrogen in MOF-74-M (M = metal center) are performed as a function of temperature and pressure [to 45 kTorr (60 bar) at 300 K, and at lower pressures in the 20-200 K range] to investigate the nature of H(2) interactions with the unsaturated metal centers. A small shift (â¼ -30 cm(-1) with respect to the unperturbed H(2) molecule) is observed for the internal stretch frequency of H(2) molecules adsorbed on the metal site at low loading. This finding is in contrast to much larger shifts (â¼ -70 cm(-1)) observed in previous studies of MOFs with unsaturated metal centers (including MOF-74) and the general assumption that H(2) stretch shifts depend on adsorption energies (FitzGerald et al., Phys. Rev. B 2010, 81, 104305). We show that larger shifts (â¼ -70 cm(-1)) do occur, but only when the next available site ("oxygen" site) is occupied. This larger shift originates from H(2)-H(2) interactions on neighboring sites of the same pore, consistent with the short distance between H(2) in these two sites â¼2.6 Å derived from an analysis of neutron diffraction experiments of D(2)-D(2) at 4 K (Liu et al., Langmuir 2008, 24, 4772-4777). Our results at 77 K and low loading can be explained by a diffusion barrier against pair disruption, which should be enhanced by this interaction. Calculations indicate that the vibrational shifts do not correlate with binding energies and are instead very sensitive to the environment (interaction potential and H(2)-H(2) interactions), which complicates the use of variable temperature IR methods to calculate adsorption energies of specific adsorption sites.
RESUMEN
Infrared (IR) absorption spectroscopy measurements, performed at 300 K and high pressures (27-55 bar) on several prototypes of metal organic framework (MOF) materials, reveal that the MOF ligands are weakly perturbed upon incorporation of guest molecules and that the molecular hydrogen (H(2)) stretch mode is red-shifted (30-40 cm(-1)) from its unperturbed value (4155 cm(-1) for ortho H(2)). For MOFs of the form M(bdc)(ted)(0.5) (bdc = 1,4-benzenedicarboxylate; ted = triethylenediamine), H(2) molecules interact with the organic ligands instead of the saturated metal centers located at the corners of the unit cell. First-principles van der Waals density functional calculations identify the binding sites and further show that the induced dipole associated with the trapped H(2) depends sensitively on these sites. For M(bdc)(ted)(0.5) systems, the strongest dipole moment is of the site that is in the corner of the unit cell and is dominated by the interaction with the benzene ligand and not by the metal center. For MOFs of the M(3)[HCOO](6) type with relatively short ligands (i.e., formate) and 1-D pore structures, there is a weak dependence of H(2) vibrational frequency on the cations, due to a small change in the unit cell dimension. Furthermore, translational states of approximately +/-100 cm(-1) are clearly observed as side bands on the H(2) stretch mode in these 1-D channels interconnected by very small apertures. The H(2) stretch IR integrated areas in all the MOFs considered in this work increase linearly with H(2) pressure, consistent with isotherm measurements performed in similar conditions. However, the IR intensity varies substantially, depending on the number of benzene rings interacting with the H(2) molecules. Finally, there is no correlation between H(2) binding energies (determined by isotherm measurements) and the magnitude of the H(2) stretch shift, indicating that IR shifts are dominated by the environment (organic ligand, metal center, and structure) rather than the strength of the interaction. These results highlight the relevance of IR spectroscopy to determine the type and arrangement of ligands in the structure of MOFs.
RESUMEN
We have used reactive force field (ReaxFF) to investigate the mechanism of interaction of alanes on Al(111) surface. Our simulations show that, on the Al(111) surface, alanes oligomerize into larger alanes. In addition, from our simulations, adsorption of atomic hydrogen on Al(111) surface leads to the formation of alanes via H-induced etching of aluminum atoms from the surface. The alanes then agglomerate at the step edges forming stringlike conformations. The identification of these stringlike intermediates as a precursor to the bulk hydride phase allows us to explain the loss of resolution in surface IR experiments with increasing hydrogen coverage on single crystal Al(111) surface. This is in excellent agreement with the experimental works of Go et al. [E. Go, K. Thuermer, and J. E. Reutt-Robey, Surf. Sci. 437, 377 (1999)]. The mobility of alanes molecules has been studied using molecular dynamics and it is found that the migration energy barrier of Al(2)H(6) is 2.99 kcal/mol while the prefactor is D(0)=2.82 x 10(-3) cm(2)/s. We further investigated the interaction between an alane and an aluminum vacancy using classical molecular dynamics simulations. We found that a vacancy acts as a trap for alane, and eventually fractionates/annihilates it. These results show that ReaxFF can be used, in conjunction with ab initio methods, to study complex reactions on surfaces at both ambient and elevated temperature conditions.
RESUMEN
The biological response of multi-walled carbon nanotubes (MWNTs) is related to their physicochemical properties and a thorough MWNT characterization should accompany an assessment of their biological activity, including their potential toxicity. Beyond characterizing the physicochemical properties of MWNTs from different sources or manufacturers, it is also important to characterize different production lots of the same MWNT product from the same vendor (i.e., lot-to-lot batch consistency). Herein, we present a comprehensive physicochemical characterization of two lots of commercial pristine MWNTs (pMWNTs) and carboxylated MWNTs (cMWNTs) used to study the response of mammalian macrophages to MWNTs. There were many similarities between the physicochemical properties of the two lots of cMWNTs and neither significantly diminished the 24-h proliferation of RAW 264.7 macrophages up to the highest concentration tested (200 µg cMWNTs/mL). Conversely, several physicochemical properties of the two lots of pMWNTs were different; notably, the newer lot of pMWNTs displayed less oxidative stability, a higher defect density, and a smaller amount of surface oxygen species relative to the original lot. Furthermore, a 72-h half maximal inhibitory concentration (IC-50) of ~90 µg pMWNTs/mL was determined for RAW 264.7 cells with the new lot of pMWNTs. These results demonstrate that subtle physicochemical differences can lead to significantly dissimilar cellular responses, and that production-lot consistency must be considered when assessing the toxicity of MWNTs.
RESUMEN
Cesium lead halide perovskite nanocrystals (PNCs), while possessing facile chemical synthesis routes and high photoluminescence (PL) properties, are still challenged by issues of instability and degradation. Although atomic layer deposition (ALD) of metal oxides has been one of the common encapsulation approaches for longer term stability, its application inevitably resulted in severe loss of emission efficiency and at times partial loss of structural integrity of perovskites, creating a bottleneck in its practical viability. We demonstrate a nondestructive modified gas-phase technique with codeposition of both precursors trimethylaluminum and water to dramatically enhance the PL emission in zero-dimensional (0D) Cs4PbBr6 PNCs via alumina encapsulation. X-ray photoelectron spectroscopy analysis of Cs4PbBr6 films reveals the alumina deposition to be accompanied by elemental composition changes, particularly by the reduction of the excessive cesium content. Ab initio density functional theory simulations further unfold that the presence of excess Cs on the surface of PNCs leads to decomposition of structural [PbBr6]4- octahedra in the 0D perovskite lattice, which can be prevented in the presence of added hydroxyl groups. Our study thus unveils the pivotal role of the PNC surface composition and treatment in the process of its interaction with metal oxide precursors to control the PL properties as well as the stability of PNCs, providing an unprecedented way to use the conventional ALD technique for their successful integration into optoelectronic and photonic devices with improved properties.
RESUMEN
Alanes are believed to be the mass transport intermediate in many hydrogen storage reactions and thus important for understanding rehydrogenation kinetics for alanates and AlH3. Combining density functional theory (DFT) and surface infrared (IR) spectroscopy, we provide atomistic details about the formation of alanes on the Al(111) surface, a model environment for the rehydrogenation reactions. At low coverage, DFT predicts a 2-fold bridge site adsorption for atomic hydrogen at 1150 cm(-1), which is too weak to be detected by IR but was previously observed in electron energy loss spectroscopy. At higher coverage, steps are the most favorable adsorption sites for atomic H adsorption, and it is likely that the AlH3 molecules form (initially strongly bound to steps) at saturation. With increasing exposures AlH3 is extracted from the step edge and becomes highly mobile on the terraces in a weakly bound state, accounting for step etching observed in previous STM studies. The mobility of these weakly bound AlH3 molecules is the key factor leading to the growth of larger alanes through AlH3 oligomerization. The subsequent decomposition and desorption of alanes is also investigated and compared to previous temperature programmed desorption studies.
RESUMEN
Cleaning and passivation of metal surfaces are necessary steps for selective film deposition processes that are attractive for some microelectronic applications (e.g., fully aligned vias or self-aligned contacts). For copper, there is limited knowledge about the mechanisms of the copper oxide reduction process and subsequent passivation layer formation reactions. We have investigated the in situ cleaning (i.e., oxidation and reduction by vapor-phase species) and passivation of chemical-mechanical polishing (CMP)-prepared Cu films in an effort to derive the mechanisms associated with selectively tailoring the surface chemistry. By monitoring the interaction of vapor-phase ethanol with the surface species generated after ozone cleaning at 300 °C, we find that the optimum procedure to remove these species and avoid byproduct redeposition is to use atomic layer deposition (ALD)-like binary cycles of ethanol and N2, with active pumping. We have further explored passivation of clean Cu using benzotriazole and 2,2'-bipyridine in an ALD environment. Both molecules chemisorb on clean Cu in an upright orientation, with respect to the metal surface at temperatures higher than the melting point of the organic inhibitors (100 ≤ T < 300 °C). Both molecules desorb without decomposition from clean Cu above 300 °C but not from Cu2O. Previous studies related to the passivation of Cu surfaces using heterocyclic amines have focused on solution-based or ultrahigh vacuum applications of the passivation molecules onto single crystalline Cu samples. The present work explores more industrially relevant vapor-phase passivation of CMP-cleaned, electroplated Cu samples using ALD-like processing conditions and in situ vapor-phase cleaning.
RESUMEN
The main challenge for gas storage and separation in nanoporous materials is that many molecules of interest adsorb too weakly to be effectively retained. Instead of synthetically modifying the internal surface structure of the entire bulk-as is typically done to enhance adsorption-here we show that post exposure of a prototypical porous metal-organic framework to ethylenediamine can effectively retain a variety of weakly adsorbing molecules (for example, CO, CO2, SO2, C2H4, NO) inside the materials by forming a monolayer-thick cap at the external surface of microcrystals. Furthermore, this capping mechanism, based on hydrogen bonding as explained by ab initio modelling, opens the door for potential selectivity. For example, water molecules are shown to disrupt the hydrogen-bonded amine network and diffuse through the cap without hindrance and fully displace/release the retained small molecules out of the metal-organic framework at room temperature. These findings may provide alternative strategies for gas storage, delivery and separation.
RESUMEN
The ability to selectively chemically functionalize silicon nitride (Si3N4) or silicon dioxide (SiO2) surfaces after cleaning would open interesting technological applications. In order to achieve this goal, the chemical composition of surfaces needs to be carefully characterized so that target chemical reactions can proceed on only one surface at a time. While wet-chemically cleaned silicon dioxide surfaces have been shown to be terminated with surficial Si-OH sites, chemical composition of the HF-etched silicon nitride surfaces is more controversial. In this work, we removed the native oxide under various aqueous HF-etching conditions and studied the chemical nature of the resulting Si3N4 surfaces using infrared absorption spectroscopy (IRAS), x-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), and contact angle measurements. We find that HF-etched silicon nitride surfaces are terminated by surficial Si-F and Si-OH bonds, with slightly subsurface Si-OH, Si-O-Si, and Si-NH2 groups. The concentration of surficial Si-F sites is not dependent on HF concentration, but the distribution of oxygen and Si-NH2 displays a weak dependence. The Si-OH groups of the etched nitride surface are shown to react in a similar manner to the Si-OH sites on SiO2, and therefore no selectivity was found. Chemical selectivity was, however, demonstrated by first reacting the -NH2 groups on the etched nitride surface with aldehyde molecules, which do not react with the Si-OH sites on a SiO2 surface, and then using trichloro-organosilanes for selective reaction only on the SiO2 surface (no reactivity on the aldehyde-terminated Si3N4 surface).
RESUMEN
In situ deposition of a thin (â¼5 nm) layer of copper between Al and CuO layers is shown to increase the overall nanolaminate material reactivity. A combination of transmission electron microscopy imaging, in situ infrared spectroscopy, low energy ion scattering measurements, and first-principles calculations reveals that copper spontaneously diffuses into aluminum layers (substantially less in CuO layers). The formation of an interfacial Al:Cu alloy with melting temperature lower than pure Al metal is responsible for the enhanced reactivity, opening a route to controlling the stochiometry of the aluminum layer and increasing the reactivity of the nanoenergetic multilayer systems in general.
RESUMEN
Interface layers between reactive and energetic materials in nanolaminates or nanoenergetic materials are believed to play a crucial role in the properties of nanoenergetic systems. Typically, in the case of Metastable Interstitial Composite nanolaminates, the interface layer between the metal and oxide controls the onset reaction temperature, reaction kinetics, and stability at low temperature. So far, the formation of these interfacial layers is not well understood for lack of in situ characterization, leading to a poor control of important properties. We have combined in situ infrared spectroscopy and ex situ X-ray photoelectron spectroscopy, differential scanning calorimetry, and high resolution transmission electron microscopy, in conjunction with first-principles calculations to identify the stable configurations that can occur at the interface and determine the kinetic barriers for their formation. We find that (i) an interface layer formed during physical deposition of aluminum is composed of a mixture of Cu, O, and Al through Al penetration into CuO and constitutes a poor diffusion barrier (i.e., with spurious exothermic reactions at lower temperature), and in contrast, (ii) atomic layer deposition (ALD) of alumina layers using trimethylaluminum (TMA) produces a conformal coating that effectively prevents Al diffusion even for ultrathin layer thicknesses (â¼0.5 nm), resulting in better stability at low temperature and reduced reactivity. Importantly, the initial reaction of TMA with CuO leads to the extraction of oxygen from CuO to form an amorphous interfacial layer that is an important component for superior protection properties of the interface and is responsible for the high system stability. Thus, while Al e-beam evaporation and ALD growth of an alumina layer on CuO both lead to CuO reduction, the mechanism for oxygen removal is different, directly affecting the resistance to Al diffusion. This work reveals that it is the nature of the monolayer interface between CuO and alumina/Al rather than the thickness of the alumina layer that controls the kinetics of Al diffusion, underscoring the importance of the chemical bonding at the interface in these energetic materials.