A synchrotron-based photoemission study of the MoO3∕Co interface.

The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical reactions also induce a large interface dipole, which significantly increases the work function of the cobalt substrate. In addition, two interface states located at 1.0 and 2.0 eV below the Fermi level are identified. These two states overlap at film thickness of between 2-4 nm, which suggests the MoO(3) intermediate layer may facilitate ohmic charge transport.

Charge transfer dynamics of 3,4,9,10-perylene-tetracarboxylic-dianhydride molecules on Au(111) probed by resonant photoemission spectroscopy.

Charge transfer dynamics across the lying-down 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) organic semiconductor molecules on Au(111) interface has been investigated using the core-hole clock implementation of resonant photoemission spectroscopy. It is found that the charge transfer time scale at the PTCDA∕Au(111) interface is much larger than the C 1s core-hole lifetime of 6 fs, indicating weak electronic coupling between PTCDA and the gold substrate due to the absence of chemical reaction and∕or bonding.

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.

Fabrication of highly ordered P3HT:PCBM nanostructures and its application as a supercapacitive electrode.

In this paper, we successfully demonstrated the fabrication of highly ordered and large-scale P3HT:PCBM nanowires via a slow-drying method, which allows for the convenient and cost-effective preparation of well-defined P3HT:PCBM nanostructures with large domains. The formation of the organic nanowires can be explained by the self-organization of polymer chains under favorable thermodynamic conditions in the slow-drying process. Furthermore, the C-V measurements revealed that the P3HT:PCBM nanowires possess high capacitance. This supercapacitive behavior of the nanowires is related to their large surface area and open structure, which can facilitate ion transport and accumulation. Owing to their extremely easy preparation and excellent capacitance performance, the P3HT:PCBM nanowires offer a promising electrode material for supercapacitor devices.