Anomalous High-Temperature Magnetoresistance in a Dilute 2D Hole System.

We report an unusual magnetoresistance that strengthens with the temperature in a dilute two-dimensional (2D) hole system in GaAs/AlGaAs quantum wells with densities p=1.98-0.99×10^{10}/cm^{2} where r_{s}, the ratio between Coulomb energy and Fermi energy, is as large as 20-30. We show that, while the system exhibits a negative parabolic magnetoresistance at low temperatures (≲0.4 K) characteristic of an interacting Fermi liquid, a positive magnetoresistance emerges unexpectedly at higher temperatures, and grows with increasing temperature even in the regime T∼E_{F}, close to the Fermi energy. This unusual positive magnetoresistance at high temperatures can be attributed to the viscous transport of 2D hole fluid in the hydrodynamic regime where holes scatter frequently with each other. These findings give insight into the collective transport of strongly interacting carriers in the r_{s}≫1 regime and new routes toward magnetoresistance at high temperatures.

Spatial Mapping of Local Density Variations in Two-dimensional Electron Systems Using Scanning Photoluminescence.

We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of ∼2.2 × 108 cm-2. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. In addition to this global variation in electron density, we observe local density fluctuations across the sample. These random density fluctuations are also seen in samples that were continuously rotated during growth, and we attribute them to residual space charges at the substrate-epitaxy interface. This is corroborated by the fact that the average magnitude of density fluctuations is increased to ∼9 × 109 cm-2 from ∼1.2 × 109 cm-2 when the buffer layer between the substrate and the quantum well is decreased by a factor of 7. Our data provide direct evidence for local density inhomogeneities even in very high-quality two-dimensional carrier systems.

Enhanced coherence between condensates formed resonantly at different times.

We demonstrate coherence between exciton-polariton condensates created resonantly at different times. The coherence persists much longer than the individual particle dephasing time, and this persistence increases as the particle density increases. The observed coherence time exceeds that of the injecting laser pulse by more than an order of magnitude. We show that this significant coherence enhancement relies critically on the many-body particle interactions, as verified by its dependence on particle density, interaction strength, and bath temperature, whereas the mass of the particles plays no role in the condensation of resonantly injected polaritons. Furthermore, we observe a large nonlinear phase shift resulting from intra-condensate interaction energy. Our results provide a new approach for probing ultrafast dynamics of resonantly-created condensates and open new directions in the study of coherence in matter.

Dynamic Stark effect in strongly coupled microcavity exciton polaritons.

We present experimental observations of a nonresonant dynamic Stark shift in strongly coupled microcavity quantum well exciton polaritons--a system which provides a rich variety of solid-state collective phenomena. The Stark effect is demonstrated in a GaAs/AlGaAs system at 10 K by femtosecond pump-probe measurements, with the blueshift approaching the meV scale for a pump fluence of 2 mJ cm(-2) and 50 meV red detuning, in good agreement with theory. The energy level structure of the strongly coupled polariton Rabi doublet remains unaffected by the blueshift. The demonstrated effect should allow generation of ultrafast density-independent potentials and imprinting well-defined phase profiles on polariton condensates, providing a powerful tool for manipulation of these condensates, similar to dipole potentials in cold-atom systems.

Effect of strain on stripe phases in the quantum Hall regime.

Preferential orientation of the stripe phases in the quantum Hall (QH) regime has remained a puzzle since its discovery. We show experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the QH regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along the [110] or [110] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible for the observed orientation of CDW in pristine electron and hole samples.

Transport in helical Luttinger liquids in the fractional quantum Hall regime.

Domain walls in fractional quantum Hall ferromagnets are gapless helical one-dimensional channels formed at the boundaries of topologically distinct quantum Hall (QH) liquids. Naïvely, these helical domain walls (hDWs) constitute two counter-propagating chiral states with opposite spins. Coupled to an s-wave superconductor, helical channels are expected to lead to topological superconductivity with high order non-Abelian excitations1-3. Here we investigate transport properties of hDWs in the ν = 2/3 fractional QH regime. Experimentally we found that current carried by hDWs is substantially smaller than the prediction of the naïve model. Luttinger liquid theory of the system reveals redistribution of currents between quasiparticle charge, spin and neutral modes, and predicts the reduction of the hDW current. Inclusion of spin-non-conserving tunneling processes reconciles theory with experiment. The theory confirms emergence of spin modes required for the formation of fractional topological superconductivity.

Probing occupied states of the molecular layer in Au-alkanedithiol-GaAs diodes.

Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH(2))(n)SH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diodes. An exponential energy dependence in the IPE yield was observed for the molecular diodes, in contrast to the quadratic energy dependence characteristic of metal-semiconductor Schottky diodes, indicating that Au is not the source of electrons in the IPE process in the molecular diodes. From the GaAs dopant density dependence, we also can rule out GaAs being the source of these electrons. Compared with the results of cluster electronic structure calculations, we suggest that IPE is probing the occupied levels of GaAs-molecular interfacial states.

Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field.

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6) x 10(10) cm(-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B(c) that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Delta(g)(T) approximately (1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.

Two-dimensional metal in a parallel magnetic field.

We have investigated the effect of an in-plane parallel magnetic field (B(axially) on two high mobility metallic-like dilute two-dimensional hole gas systems in GaAs quantum wells. The experiments reveal that, while suppressing the magnitude of the low temperature resistance drop, B(axially) does not affect E(a), the characteristic energy scale of the metallic resistance drop. The field B(c) at which the metallic-like resistance drop vanishes is dependent on both the width of the quantum well and the orientation of B(axially). It is unexpected that E(a) is unaffected by B(axially) up to B(c) despite the fact that the Zeeman energy at B(c) is roughly equal to E(a).