RESUMEN
Semiconductor materials with sufficiently wide band gaps are urgently desired for use in solar-blind ultraviolet detectors. In this work, the growth of AlSnO films was achieved through the magnetron sputtering technique. AlSnO films with band gaps in the range of 4.40-5.43 eV were obtained by varying the growth process, which demonstrates that the band gap of AlSnO is continuously tunable. What is more, based on the films prepared, narrow-band solar-blind ultraviolet detectors were fabricated with good solar-blind ultraviolet spectral selectivity, excellent detectivity, and narrow full widths at half-maximum in the response spectra, showing a great potential to be applied to solar-blind ultraviolet narrow-band detection. Therefore, based on the results above, this study focusing on the fabrication of detectors via band gap engineering can be a significant reference for researchers interested in solar-blind ultraviolet detection.
RESUMEN
Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 µs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.
RESUMEN
Here, we reported a low-cost and high-compatibility one-step liquid-phase synthesis method for synthesizing high-purity CsPbBr3 micro-/nanoflake single crystals. On the basis of the high-purity CsPbBr3, we further prepared a low-dimensional photodetector capable of balanced photodetection, involving both high external quantum efficiency and rapid temporal response, which is barely realized in previously reported low-dimensional photodetectors.
RESUMEN
Vacuum-ultraviolet (VUV) detector equipped on satellites has extensive application in space exploration and cosmic science. For a VUV detector, a semiconductor material with a sufficiently wide band gap is eagerly desired. In this work, a wide-band gap amorphous-MgGaO (a-MGO) film was epitaxially grown on n-type GaN substrate by atomic layer deposition and a p-i-n-type heterojunction device for VUV detection was constructed with a-MGO film as a photosensitive layer and p-type graphene as a transparent conductive layer. The device exhibits a good spectral selectivity of VUV with photovoltaic response, a high responsivity (2 mA W-1) under zero bias, and an ultrafast response speed (rise and decay time of 0.76 µs and 0.56 ms, respectively) under nanosecond VUV pulse irradiation. This newly developed device shows great potential in VUV detection for space exploration.