Plant Parasitic Nematode Identification in Complex Samples with Deep Learning.

Plant parasitic nematodes are significant contributors to yield loss worldwide, causing devastating losses to every crop species, in every climate. Mitigating these losses requires swift and informed management strategies, centered on identification and quantification of field populations. Current plant parasitic nematode identification methods rely heavily on manual analyses of microscope images by a highly trained nematologist. This mode is not only expensive and time consuming, but often excludes the possibility of widely sharing and disseminating results to inform regional trends and potential emergent issues. This work presents a new public dataset containing annotated images of plant parasitic nematodes from heterologous soil extractions. This dataset serves to propagate new automated methodologies or speedier plant parasitic nematode identification using multiple deep learning object detection models and offers a path towards widely shared tools, results, and meta-analyses.

In-Plane Radiation of Surface Plasmon Polaritons Excited by Free Electrons.

Surface plasmon polaritons (SPPs) have become a research hotspot due to their high intensity and subwavelength localization. Through free-electron excitation, a portion of the momentum of moving electrons can be converted into SPPs. Converting highly localized SPPs into a radiated field is an approach with the potential to aid in the development of a light radiation source. Reducing losses of SPPs is currently a critical challenge that needs to be addressed. The lifetime of SPPs in metal films is longer than that in metal blocks. Traditional optical gratings can transform SPPs into radiation to avoid the decay of SPPs in metal; however, they are created by etching metal films, so they tend to alter the dispersion characteristics of these films and will emit radiation in the direction perpendicular to the metal surface. This paper proposes an approach to converting the SPPs of a metal film excited by free electrons into a radiation field via lateral grating and obtaining in-plane radiation. We investigate the properties of SPP lateral radiation. The study of lateral radiation from metal films holds significant importance for SPP radiation sources and SPP on-chip circuit development.

Comparative Analysis of the GaN Nonpolar Plane Morphology by Wet Treatment and Its Effect on Electrical Properties in Trench MOSFET.

The morphological characteristics of the GaN nonpolar sidewalls with different crystal plane orientations were studied under various TMAH wet treatment conditions, and the effect of different morphological features on device carrier mobility was modeled and analyzed. After TMAH wet treatment, the morphology of the a-plane sidewall presents multiplied zigzag triangular prisms along the [0001] direction, which consist of two adjacent m-plane and c-plane on top. While along the [112̅0] direction, the m-plane sidewall is represented by thin, striped prisms with three m-plane and a c-plane on the side. The density and size of sidewall prisms were studied by varying the solution temperature and immersion period. The prism density decreases linearly as the solution temperature rises. With increased immersion time, both a-plane and m-plane sidewalls show smaller prism sizes. Vertical GaN trench MOSFET with nonpolar a- and m-plane sidewall channels were fabricated and characterized. By properly treated in TMAH solution, transistors with an a-plane sidewall conduction channel exhibit higher current density, from 241 to 423 A cm-2@VDS = 10 V, VGS = 20 V, and higher mobility, from 2.9 to 2.0 cm2 (V s)-1, compared to those of m-plane sidewall devices. The temperature dependence on mobility is also discussed, and a modeling analysis for the difference in carrier mobility is then performed.