RESUMEN
The combination of antiferromagnetism and topological properties in Mn3X (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of Mn3Ga thin films on SiO2(001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick Mn3Ga films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) Mn3Ga(002) phase from the relatively thin Mn3Ga films after annealing at 773 K. The investigation of the growth mechanism of Mn3Ga polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.
RESUMEN
Ni-substituted Mn3Ga displays a weak ferromagnetism embedded in an antiferromagnetic (AF) phase. Upon field cooling, the alloy exhibits exchange bias and an open hysteresis loop, signifying kinetic arrest at room temperature. For the first time, a kinetic arrest is seen in a compound due to the first order transition of an embedded defect phase. A systematic study of crystal structure, local structure, and magnetic properties of Mn3-xNixGa (x= 0, 0.25) alloys reveal the origin of ferromagnetism in Mn2.75Ni0.25Ga is due to the segregation of a Heusler-type environment around Ni in the cubic Mn3Ga matrix. Upon temper annealing at 400∘C, these local structural defects around the Ni phase separate into a modulated ferromagnetic (FM) Ni-Mn-Ga Heusler phase. A strong interaction between the AF host and the FM defect phase gives rise to exchange bias. The first-order transition of the defect phase seems to be responsible for the observed kinetic arrest in Mn2.75Ni0.25Ga.
RESUMEN
One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel-junction devices based on effective manipulation of antiferromagnetic spins. In this work, the giant piezoelectric strain modulation of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal-D019 hexagonal Mn3 Ga-is demonstrated. Furthermore, tunnel-junction devices are built with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.