Volume reflection dependence of 400 GeV/c protons on the bent crystal curvature.
Phys Rev Lett
; 101(23): 234801, 2008 Dec 05.
Article
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| MEDLINE
| ID: mdl-19113559
ABSTRACT
The trend of volume reflection parameters (deflection angle and efficiency) in a bent (110) silicon crystal has been investigated as a function of the crystal curvature with 400 GeV/c protons on the H8 beam line at the CERN Super Proton Synchrotron. This Letter describes the analysis performed at six different curvatures showing that the optimal radius for volume reflection is approximately 10 times greater than the critical radius for channeling. A strong scattering of the beam by the planar potential is also observed for a bend radius close to the critical one.
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Banco de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2008
Tipo del documento:
Article
País de afiliación:
Suiza