Stability-improved organic n-channel thin-film transistors with nm-thin hydrophobic polymer-coated high-k dielectrics.
Phys Chem Chem Phys
; 14(41): 14202-6, 2012 Nov 07.
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| MEDLINE
| ID: mdl-22820975
ABSTRACT
We report on the fabrication of N,N'-ditridecyl-perylene-3,49,10-tetracarboxylic diimide-C13 (PTCDI-C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al(2)O(3) whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80 °C, although the post-annealing was previously implemented at 120-140 °C for PTCDI domain growth in general. The low temperature of 80 °C hardly damages the CYTOP/n-channel organic interface which is deformed at a temperature higher than the glass transition temperature of CYTOP (â¼110 °C). The pentacenequinone passivation layer turned out to be helpful to keep the interfacial trap density minimum, according to the photo-excited charge collection spectroscopy results for our 80 °C-annealed OTFTs with CYTOP-modified dielectrics.
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MEDLINE
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En
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Phys Chem Chem Phys
Asunto de la revista:
BIOFISICA
/
QUIMICA
Año:
2012
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Article