Geometry-induced dislocations in coaxial heterostructural nanotubes.
Small
; 9(13): 2255-9, 2013 Jul 08.
Article
en En
| MEDLINE
| ID: mdl-23401192
ABSTRACT
Highly localized dislocations in GaN/ZnO hetero-nanostructures are generated from the residual strain field by lattice mismatches at two interfaces between the substrate and hetero-nanostructures, and between the ZnO core and GaN shell. The local strain field is measured using tranmission electron microscopy, and the relationship between the nanostructure morphology and the highly localized dislocations is analyzed by a finite element method.
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Banco de datos:
MEDLINE
Idioma:
En
Revista:
Small
Asunto de la revista:
ENGENHARIA BIOMEDICA
Año:
2013
Tipo del documento:
Article