Crossed Ga2O3/SnO2 multiwire architecture: a local structure study with nanometer resolution.
Nano Lett
; 14(10): 5479-87, 2014 Oct 08.
Article
en En
| MEDLINE
| ID: mdl-25181032
ABSTRACT
Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local structure in crossing points in metal oxide nanowires. Thus, if intentionally grown crossed nanowires are well-patterned, an ideal model to study the junction is formed. By combining electron and synchrotron beam nanoprobes, we show here experimental evidence of the role of impurities in the coupling formation, structural modifications, and atomic site configuration based on crossed Ga2O3/SnO2 nanowires. Our experiment opens new avenues for further local structure studies with both nanometer resolution and elemental sensitivity.
Texto completo:
1
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2014
Tipo del documento:
Article
País de afiliación:
Francia