Control of the metal-insulator transition in VO2 epitaxial film by modifying carrier density.

Chen, F H; Fan, L L; Chen, S; Liao, G M; Chen, Y L; Wu, P; Song, Li; Zou, C W; Wu, Z Y

Chen, F H; Fan, L L; Chen, S; Liao, G M; Chen, Y L; Wu, P; Song, Li; Zou, C W; Wu, Z Y.

Afiliación

Chen FH; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Fan LL; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Chen S; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Liao GM; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Chen YL; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Wu P; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Song L; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Zou CW; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.
Wu ZY; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China.

ACS Appl Mater Interfaces ; 7(12): 6875-81, 2015 Apr 01.

Article en En | MEDLINE | ID: mdl-25751594

Palabras clave

carrier concentration; p-GaN; phase transition modulation; vanadium dioxide

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2015 Tipo del documento: Article

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