Novel Electronic Behavior Driving NdNiO3 Metal-Insulator Transition.

Upton, M H; Choi, Yongseong; Park, Hyowon; Liu, Jian; Meyers, D; Chakhalian, J; Middey, S; Kim, Jong-Woo; Ryan, Philip J

Upton, M H; Choi, Yongseong; Park, Hyowon; Liu, Jian; Meyers, D; Chakhalian, J; Middey, S; Kim, Jong-Woo; Ryan, Philip J.

Afiliación

Upton MH; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Choi Y; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Park H; Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA.
Liu J; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Meyers D; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Chakhalian J; Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Middey S; Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.
Kim JW; Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.
Ryan PJ; Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA.

Phys Rev Lett ; 115(3): 036401, 2015 Jul 17.

Article en En | MEDLINE | ID: mdl-26230808

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Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos

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Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos