Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors.

Constantinou, Marios; Stolojan, Vlad; Rajeev, Kiron Prabha; Hinder, Steven; Fisher, Brett; Bogart, Timothy D; Korgel, Brian A; Shkunov, Maxim

Constantinou, Marios; Stolojan, Vlad; Rajeev, Kiron Prabha; Hinder, Steven; Fisher, Brett; Bogart, Timothy D; Korgel, Brian A; Shkunov, Maxim.

Afiliación

Bogart TD; Department of Chemical Engineering, Texas Materials Institute and Center for Nano and Molecular Science and Technology, The University of Texas , Austin, Texas 78712-1062, United States.
Korgel BA; Department of Chemical Engineering, Texas Materials Institute and Center for Nano and Molecular Science and Technology, The University of Texas , Austin, Texas 78712-1062, United States.

ACS Appl Mater Interfaces ; 7(40): 22115-20, 2015 Oct 14.

Article en En | MEDLINE | ID: mdl-26402417

Palabras clave

DMF; XPS; field-effect transistor; hysteresis; interface passivation; interface trap reduction; nanowire interface; silicon nanowires

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2015 Tipo del documento: Article

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