An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.
Nano Lett
; 17(10): 6248-6257, 2017 10 11.
Article
en En
| MEDLINE
| ID: mdl-28876941
ABSTRACT
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZrxTi1-xO3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZrxTi1-xO3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a â¼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.
Texto completo:
1
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2017
Tipo del documento:
Article
País de afiliación:
Estados Unidos