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Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2.
Park, Youngsin; Chan, Christopher C S; Taylor, Robert A; Kim, Yongchul; Kim, Nammee; Jo, Yongcheol; Lee, Seung W; Yang, Woochul; Im, Hyunsik; Lee, Geunsik.
Afiliación
  • Park Y; Department of Chemistry, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea.
  • Chan CCS; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.
  • Taylor RA; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • Kim Y; Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK. robert.talyor@physics.ox.ac.uk.
  • Kim N; Department of Chemistry, School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea.
  • Jo Y; Department of Physics, Soongsil University, Seoul, 06978, Korea.
  • Lee SW; Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Korea.
  • Yang W; Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Korea.
  • Im H; Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Korea.
  • Lee G; Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Korea. hyunsik7@dongguk.edu.
Sci Rep ; 8(1): 5380, 2018 Mar 29.
Article en En | MEDLINE | ID: mdl-29599429
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article