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Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors.
Yang, Fangyuan; Zhang, Zuocheng; Wang, Nai Zhou; Ye, Guo Jun; Lou, Wenkai; Zhou, Xiaoying; Watanabe, Kenji; Taniguchi, Takashi; Chang, Kai; Chen, Xian Hui; Zhang, Yuanbo.
Afiliación
  • Yang F; State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China.
  • Zhang Z; Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093 , China.
  • Wang NZ; Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China.
  • Ye GJ; State Key Laboratory of Surface Physics and Department of Physics , Fudan University , Shanghai 200433 , China.
  • Lou W; Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093 , China.
  • Zhou X; Institute for Nanoelectronic Devices and Quantum Computing , Fudan University , Shanghai 200433 , China.
  • Watanabe K; Hefei National Laboratory for Physical Science at Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China.
  • Taniguchi T; Key Laboratory of Strongly Coupled Quantum Matter Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China.
  • Chang K; Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093 , China.
  • Chen XH; Hefei National Laboratory for Physical Science at Microscale and Department of Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China.
  • Zhang Y; Key Laboratory of Strongly Coupled Quantum Matter Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China.
Nano Lett ; 18(10): 6611-6616, 2018 10 10.
Article en En | MEDLINE | ID: mdl-30216077
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2018 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2018 Tipo del documento: Article País de afiliación: China