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Growth Kinetics of Two-Dimensional Hexagonal Boron Nitride Layers on Pd(111).
Arias, Pedro; Ebnonnasir, Abbas; Ciobanu, Cristian V; Kodambaka, Suneel.
Afiliación
  • Arias P; Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 United States.
  • Ebnonnasir A; Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 United States.
  • Ciobanu CV; Department of Mechanical Engineering and Materials Science Program, Colorado School of Mines, Golden, Colorado 80401 United States.
  • Kodambaka S; Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, California 90095 United States.
Nano Lett ; 20(4): 2886-2891, 2020 Apr 08.
Article en En | MEDLINE | ID: mdl-32130016
Using in situ variable-temperature scanning tunneling microscopy (300-673 K) during chemical vapor deposition of two-dimensional hexagonal boron nitride (hBN) on Pd(111) from borazine precursor at pressures up to 10-6 mbar, we identify the mechanisms leading to carpetlike uphill or downhill growth across the Pd steps. Deposition at a higher rate and lower temperature promotes uphill growth via preferential attachment at the ascending and descending step-edges, whereas a lower deposition rate and higher temperature lead to downhill growth via nucleation and growth of islands on Pd terraces. We attribute this unusual growth behavior to differences in temperature-dependent rates of hBN deposition at the steps versus on the Pd terraces. Our results illustrate how growth mechanisms can be activated by a pair of parameters (substrate temperature and partial pressure of borazine) and provide new insights into the mechanisms underlying carpetlike growth of hBN and other layered materials.
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Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nano Lett Año: 2020 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nano Lett Año: 2020 Tipo del documento: Article