Ohmic Contact to Two-Dimensional Nanofabricated Silicon Structures with a Two-Probe Scanning Tunneling Microscope.

ABSTRACT

We used multiprobe scanning tunneling microscope (STM) to fabricate and electrically characterize nanostructures on Si surfaces. We overcame resistive contacts by using field evaporation to clean tip apexes in order to create Ohmic contact with the Si surface states on a Si substrate. A two-probe (2P-) STM with Ohmic contact allowed for measurement at very low bias, limiting conduction through space-charge layer and bulk states. The Ohmic 2P-STM measurement clarified the surface conductivity of the Si(111)-(7 × 7) surface. We also confirmed that Ohmic 2P-STM can be replaced with more convenient Ohmic one-probe STM for the conductance measurements on the Si surface. We prepared nanostructures using STM lithography to define electronically isolated two-dimensional (2D) regions with various aspect ratios. Their surface conduction properties are described well by the conventional sheet model, proving the diffusive 2D conduction on the Si surface. Constrictions and breaks in 2D structures were also evaluated. Ohmic 2P-STM will be helpful for the investigation of exploratory atomic-scale circuitry or cutting-edge materials sciences.