Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge-Contact.

Wang, Xiujun; Song, Sannian; Wang, Haomin; Guo, Tianqi; Xue, Yuan; Wang, Ruobing; Wang, HuiShan; Chen, Lingxiu; Jiang, Chengxin; Chen, Chen; Shi, Zhiyuan; Wu, Tianru; Song, Wenxiong; Zhang, Sifan; Watanabe, Kenji; Taniguchi, Takashi; Song, Zhitang; Xie, Xiaoming

Wang, Xiujun; Song, Sannian; Wang, Haomin; Guo, Tianqi; Xue, Yuan; Wang, Ruobing; Wang, HuiShan; Chen, Lingxiu; Jiang, Chengxin; Chen, Chen; Shi, Zhiyuan; Wu, Tianru; Song, Wenxiong; Zhang, Sifan; Watanabe, Kenji; Taniguchi, Takashi; Song, Zhitang; Xie, Xiaoming.

Afiliación

Wang X; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Song S; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Wang H; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, 200050, P. R. China.
Guo T; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Xue Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Wang R; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Wang H; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Chen L; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, 200050, P. R. China.
Jiang C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Chen C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Shi Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Wu T; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Song W; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Zhang S; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Watanabe K; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
Taniguchi T; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, 200050, P. R. China.
Song Z; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
Xie X; CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai, 200050, P. R. China.