Atomic layer etching of Sn by surface modification with H and Cl radicals.

Kim, Doo San; Jang, Yun Jong; Kim, Ye Eun; Gil, Hong Seong; Jeong, Byeong Hwa; Yeom, Geun Young.

Afiliación

Kim DS; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jang YJ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Kim YE; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Gil HS; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Jeong BH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Yeom GY; Korea Institute for Super Materials, ULVAC KOREA, Pyeongtaek 17792, Republic of Korea.

Nanotechnology ; 34(3)2022 Nov 04.

Article en En | MEDLINE | ID: mdl-36223734