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Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior.
You, Jiawen; Pan, Jie; Shang, Shun-Li; Xu, Xiang; Liu, Zhenjing; Li, Jingwei; Liu, Hongwei; Kang, Ting; Xu, Mengyang; Li, Shaobo; Kong, Deqi; Wang, Wenliang; Gao, Zhaoli; Zhou, Xing; Zhai, Tianyou; Liu, Zi-Kui; Kim, Jang-Kyo; Luo, Zhengtang.
Afiliación
  • You J; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Pan J; Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong999777, P. R. China.
  • Shang SL; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania16802, United States.
  • Xu X; School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China.
  • Liu Z; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Li J; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Liu H; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Kang T; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Xu M; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Li S; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Kong D; State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China.
  • Wang W; State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China.
  • Gao Z; Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Re
  • Zhou X; State Key Laboratory of Luminescent Materials and Devices, Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510640, P. R. China.
  • Zhai T; Department of Biomedical Engineering, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong999777, P. R. China.
  • Liu ZK; CUHK Shenzhen Research Institute, No.10, second, Yuexing Road, Nanshan, Shenzhen518057, P. R. China.
  • Kim JK; School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China.
  • Luo Z; School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, P. R. China.
Nano Lett ; 22(24): 10167-10175, 2022 Dec 28.
Article en En | MEDLINE | ID: mdl-36475688
Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2022 Tipo del documento: Article