Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors.

Fan, Hanshui; Tian, Xuan; Peng, Huiting; Shen, Yinfeng; Li, Liang; Li, Ming; Gao, Liming

Fan, Hanshui; Tian, Xuan; Peng, Huiting; Shen, Yinfeng; Li, Liang; Li, Ming; Gao, Liming.

Afiliación

Fan H; Institute of Microelectronic Material & Technology, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Tian X; SanDisk Information Technology Co., Ltd., Shanghai 200241, China.
Peng H; Institute of Microelectronic Material & Technology, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Shen Y; Institute of Microelectronic Material & Technology, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Li L; SanDisk Information Technology Co., Ltd., Shanghai 200241, China.
Li M; Institute of Microelectronic Material & Technology, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Gao L; Institute of Microelectronic Material & Technology, School of Material Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.

Sensors (Basel) ; 23(6)2023 Mar 17.

Article en En | MEDLINE | ID: mdl-36991921

Palabras clave

3D NAND flash memory; DIBL effect; MONOS; TCAD; bitline voltage; channel potential; device model; neighbor wordline interference; read bias

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Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sensors (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China

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