State-of-the-Art Room Temperature Operable Zero-Bias Schottky Diode-Based Terahertz Detector Up to 5.56 THz.

Yadav, Rahul; Ludwig, Florian; Faridi, Fahd Rushd; Klopf, J Michael; Roskos, Hartmut G; Preu, Sascha; Penirschke, Andreas

Yadav, Rahul; Ludwig, Florian; Faridi, Fahd Rushd; Klopf, J Michael; Roskos, Hartmut G; Preu, Sascha; Penirschke, Andreas.

Afiliación

Yadav R; High Frequency Technology, Mittelhessen University of Applied Sciences, 61169 Friedberg, Germany.
Ludwig F; Terahertz Devices and Systems, TU Darmstadt, 64283 Darmstadt, Germany.
Faridi FR; Institute of Physics, Johann Wolfgang Goethe University, 60438 Frankfurt am Main, Germany.
Klopf JM; Terahertz Devices and Systems, TU Darmstadt, 64283 Darmstadt, Germany.
Roskos HG; Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany.
Preu S; Institute of Physics, Johann Wolfgang Goethe University, 60438 Frankfurt am Main, Germany.
Penirschke A; Terahertz Devices and Systems, TU Darmstadt, 64283 Darmstadt, Germany.

Sensors (Basel) ; 23(7)2023 Mar 26.

Article en En | MEDLINE | ID: mdl-37050531

Palabras clave

THz radiation detectors; THz sources; broadband detectors; free-electron laser (FEL); room temperature detectors; zero-bias Schottky diode

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Alemania

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Sensors (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Alemania