Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective.

Liu, Tao; Wang, Yuan; Ma, Rongyao; Wu, Hao; Tao, Jingyu; Yu, Yiren; Cheng, Zijun; Hu, Shengdong

Liu, Tao; Wang, Yuan; Ma, Rongyao; Wu, Hao; Tao, Jingyu; Yu, Yiren; Cheng, Zijun; Hu, Shengdong.

Afiliación

Liu T; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Wang Y; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Ma R; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Wu H; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Tao J; Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 401332, China.
Yu Y; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Cheng Z; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.
Hu S; School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

Micromachines (Basel) ; 14(5)2023 May 18.

Article en En | MEDLINE | ID: mdl-37241697

Palabras clave

charge enhancement factor (CEF); linear energy transfer (LET); silicon carbide (SiC); single-event burnout (SEB); single-event effect (SEE); single-event gate rupture (SEGR); single-event transient (SET); superjunction (SJ); trench; vertical diffuse metal-oxide-semiconductor field transistor (VDMOS)

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China

Texto completo

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XML

PubMed Links

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Micromachines (Basel) Año: 2023 Tipo del documento: Article País de afiliación: China