Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO<sub>X</sub>:SiO<sub>2</sub> Thin Films on Resistive Random Access Memory Devices.

Chen, Kai-Huang; Cheng, Chien-Min; Wang, Na-Fu; Kao, Ming-Cheng

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO_X:SiO₂ Thin Films on Resistive Random Access Memory Devices.

Chen, Kai-Huang; Cheng, Chien-Min; Wang, Na-Fu; Kao, Ming-Cheng.

Afiliación

Chen KH; Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung 83347, Taiwan.
Cheng CM; Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, Taiwan.
Wang NF; Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung 83347, Taiwan.
Kao MC; Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan.

Nanomaterials (Basel) ; 13(15)2023 Jul 26.

Article en En | MEDLINE | ID: mdl-37570498

Palabras clave

ITOX:SiO2; activation energy; bipolar resistance switching; electrical conduction mechanisms; resistive random access memory

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Texto completo: 1 Banco de datos: MEDLINE Tipo de estudio: Clinical_trials Idioma: En Revista: Nanomaterials (Basel) Año: 2023 Tipo del documento: Article País de afiliación: Taiwán

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