Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor.

Chang, Yeoungjin; Bukke, Ravindra Naik; Bae, Jinbaek; Jang, Jin.

Afiliación

Chang Y; Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea.
Bukke RN; Department of Semiconductor Display, Gachon University, Seongnam-si 13120, Republic of Korea.
Bae J; School of Mechanical & Materials Engineering, Indian Institute of Technology Mandi, Mandi Pradesh 175075, India.
Jang J; Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea.

Nanomaterials (Basel) ; 13(17)2023 Aug 25.

Article en En | MEDLINE | ID: mdl-37686917