Dark-field optical fault inspection of â¼10 nm scale room-temperature silicon single-electron transistors.

He, Wenkun; Chu, Kai-Lin; Abualnaja, Faris; Jones, Mervyn; Durrani, Zahid

Dark-field optical fault inspection of â¼10 nm scale room-temperature silicon single-electron transistors.

He, Wenkun; Chu, Kai-Lin; Abualnaja, Faris; Jones, Mervyn; Durrani, Zahid.

Afiliación

He W; Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.
Chu KL; Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.
Abualnaja F; Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.
Jones M; Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.
Durrani Z; Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ, United Kingdom.

Nanotechnology ; 34(50)2023 Oct 09.

Article en En | MEDLINE | ID: mdl-37725966

Palabras clave

dark field optical microscopy; modal diffraction theory simulation; optical microscopy; room temperature single electron transistors; semiconductor device inspection

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2023 Tipo del documento: Article País de afiliación: Reino Unido

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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2023 Tipo del documento: Article País de afiliación: Reino Unido