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Orbital Origin of the Intrinsic Planar Hall Effect.
Wang, Hui; Huang, Yue-Xin; Liu, Huiying; Feng, Xiaolong; Zhu, Jiaojiao; Wu, Weikang; Xiao, Cong; Yang, Shengyuan A.
Afiliación
  • Wang H; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.
  • Huang YX; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.
  • Liu H; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.
  • Feng X; School of Sciences, Great Bay University, Dongguan 523000, China.
  • Zhu J; Great Bay Institute for Advanced Study, Dongguan 523000, China.
  • Wu W; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.
  • Xiao C; School of Physics, Beihang University, Beijing 100191, China.
  • Yang SA; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore.
Phys Rev Lett ; 132(5): 056301, 2024 Feb 02.
Article en En | MEDLINE | ID: mdl-38364160
ABSTRACT
Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity-the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb_{2}, NbAs_{2}, and SrAs_{3}. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2024 Tipo del documento: Article País de afiliación: Singapur

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2024 Tipo del documento: Article País de afiliación: Singapur