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Large and Pressure-Dependent c-Axis Piezoresistivity of Highly Oriented Pyrolytic Graphite near Zero Pressure.
Wang, Bingjie; Li, Juyao; Fang, Zheng; Jiang, Yifan; Li, Shuo; Zhan, Fangyuan; Dai, Zhaohe; Chen, Qing; Wei, Xianlong.
Afiliación
  • Wang B; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
  • Li J; Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China.
  • Fang Z; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
  • Jiang Y; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
  • Li S; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
  • Zhan F; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
  • Dai Z; Department of Mechanics and Engineering Science, College of Engineering, Peking University, Beijing 100871, China.
  • Chen Q; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
  • Wei X; Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Nano Lett ; 2024 Mar 25.
Article en En | MEDLINE | ID: mdl-38525903
ABSTRACT
The c-axis piezoresistivity is a fundamental and important parameter of graphite, but its value near zero pressure has not been well determined. Herein, a new method for studying the c-axis piezoresistivity of van der Waals materials near zero pressure is developed on the basis of in situ scanning electron microscopy and finite element simulation. The c-axis piezoresistivity of microscale highly oriented pyrolytic graphite (HOPG) is found to show a large value of 5.68 × 10-5 kPa-1 near zero pressure and decreases by 2 orders of magnitude to the established value of ∼10-7 kPa-1 when the pressure increases to 200 MPa. By modulating the serial tunneling barrier model on the basis of the stacking faults, we describe the c-axis electrical transport of HOPG under compression. The large c-axis piezoresistivity near zero pressure and its large decrease in magnitude with pressure are attributed to the rapid stiffening of the electromechanical properties under compression.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article País de afiliación: China