High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers.
Opt Express
; 32(9): 15527-15536, 2024 Apr 22.
Article
en En
| MEDLINE
| ID: mdl-38859200
ABSTRACT
We demonstrate reactively sputtered Al2O3Er3+ waveguide amplifiers with an erbium concentration of 3.9 × 1020 ions/cm3, capable of achieving over 30â
dB small signal net gain at 1532â
nm using bidirectional pumping at 1480â
nm. We observe on chip output powers of 10.2-13.6 dBm of amplified signal power at 1532â
nm for a 12.9â
cm waveguide amplifier considering -25.4â
dB of lumped coupling losses per facet. Annealing was used to improve the performance of the devices, which were patterned using electron beam lithography and reactive ion etching. This result, to our knowledge, represents record breaking on-chip internal net gain for Al2O3Er3+ waveguide amplifiers, which show promise over other technologies due to wafer scalability and promise of easy monolithic integration with other material platforms to support a wide variety of applications.
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MEDLINE
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En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2024
Tipo del documento:
Article