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Nanoscale, surface-confined phase separation by electron beam induced oxidation.
Barth, Sven; Porrati, Fabrizio; Knez, Daniel; Jungwirth, Felix; Jochmann, Nicolas P; Huth, Michael; Winkler, Robert; Plank, Harald; Gracia, Isabel; Cané, Carles.
Afiliación
  • Barth S; Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60323 Frankfurt am Main, Germany. barth@physik.uni-frankfurt.de.
  • Porrati F; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
  • Knez D; Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60323 Frankfurt am Main, Germany. barth@physik.uni-frankfurt.de.
  • Jungwirth F; Institute of Electron Microscopy and Nanoanalysis, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria.
  • Jochmann NP; Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60323 Frankfurt am Main, Germany. barth@physik.uni-frankfurt.de.
  • Huth M; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
  • Winkler R; Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60323 Frankfurt am Main, Germany. barth@physik.uni-frankfurt.de.
  • Plank H; Institute for Inorganic and Analytical Chemistry, Goethe University Frankfurt, Max-von-Laue-Str. 7, 60438 Frankfurt, Germany.
  • Gracia I; Institute of Physics, Goethe University Frankfurt, Max-von-Laue-Str. 1, 60323 Frankfurt am Main, Germany. barth@physik.uni-frankfurt.de.
  • Cané C; Christian Doppler Laboratory for Direct-Write Fabrication of 3D Nano-Probes (DEFINE), Institute of Electron Microscopy, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria.
Nanoscale ; 16(31): 14722-14729, 2024 Aug 13.
Article en En | MEDLINE | ID: mdl-38922329
ABSTRACT
Electron-assisted oxidation of Co-Si-based focused electron beam induced deposition (FEBID) materials is shown to form a 2-4 nm metal oxide surface layer on top of an electrically insulating silicon oxide layer less than 10 nm thick. Differences between thermal and electron-induced oxidation on the resulting microstructure are illustrated.

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2024 Tipo del documento: Article País de afiliación: Alemania

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nanoscale Año: 2024 Tipo del documento: Article País de afiliación: Alemania