Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures.
Nano Lett
; 24(29): 8859-8865, 2024 Jul 24.
Article
en En
| MEDLINE
| ID: mdl-38981024
ABSTRACT
Cryogenic temperatures are crucial for the operation of semiconductor quantum electronic devices, yet the heating effects induced by microwave or laser signals used for quantum state manipulation can lead to significant temperature variations at the nanoscale. Therefore, probing the temperature of individual devices in working conditions and understanding the thermodynamics are paramount for designing and operating large-scale quantum computing systems. In this study, we demonstrate high-sensitivity fast thermometry in a silicon nanotransistor at cryogenic temperatures using RF reflectometry. Through this method, we explore the thermodynamic processes of the nanotransistor during and after a laser pulse and determine the dominant heat dissipation channels in the few-kelvin temperature range. These insights are important to understand thermal budgets in quantum circuits, with our techniques being compatible with microwave and laser radiation, offering a versatile approach for studying other quantum electronic devices in working conditions.
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Banco de datos:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Año:
2024
Tipo del documento:
Article
País de afiliación:
China