A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite-Silicon Tandems.

The primary performance limitation in inverted perovskite-based solar cells is the interface between the fullerene-based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open-circuit voltage and 1% absolute improvement in power conversion efficiency. Surface-sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead-halide-based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in- and egress of volatile species, synergistically improving the stability. AlOX-modified wide-bandgap perovskite absorbers as a top cell in a monolithic perovskite-silicon tandem enable a certified power conversion efficiency of 29.9% and open-circuit voltages above 1.92 volts for 1.17 square centimeters device area.

Understanding and Mitigating the Degradation of Perovskite Solar Cells Based on a Nickel Oxide Hole Transport Material during Damp Heat Testing.

The development of stable materials, processable on a large area, is a prerequisite for perovskite industrialization. Beyond the perovskite absorber itself, this should also guide the development of all other layers in the solar cell. In this regard, the use of NiOx as a hole transport material (HTM) offers several advantages, as it can be deposited with high throughput on large areas and on flat or textured surfaces via sputtering, a well-established industrial method. However, NiOx may trigger the degradation of perovskite solar cells (PSCs) when exposed to environmental stressors. Already after 100 h of damp heat stressing, a strong fill factor (FF) loss appears in conjunction with a characteristic S-shaped J-V curve. By performing a wide range of analysis on cells and materials, completed by device simulation, the cause of the degradation is pinpointed and mitigation strategies are proposed. When NiOx is heated in an air-tight environment, its free charge carrier density drops, resulting in a band misalignment at the NiOx/perovskite interface and in the formation of a barrier impeding hole extraction. Adding an organic layer between the NiOx and the perovskite enables higher performances but not long-term thermal stability, for which reducing the NiOx thickness is necessary.