Intracellular localized heterogeneous protein franking by a transmembrane domain of GP64 is sufficient to be assembled on budded virions of Bombyx mori nucleopolyhedrovirus.

Baculovirus has been widely used for foreign protein expression in biomedical studies, and budded virus (BV) surface display has developed into an important research tool for heterogenous membrane protein studies. The basic strategy of surface display is to construct a recombinant virus where the target gene is fused with a complete or partial gp64 gene. In this study, we further investigate and develop this BV surface displaying strategy. We constructed stable insect cell lines to express the target protein flanking with different regions of signal peptide (SP) and GP64 transmembrane domain (TMD). Subsequently, recombinant BmNPV was used to infect the cell, and the integration of heterogeneous protein into BV was detected. The results indicated that deletion of the n-region of SP (SPΔn) decreased the incorporation rate more than that of the full-length SP. However, the incorporation rate of the protein fused with h and c-region deletion of SP (SPΔh-c) was significantly enhanced by 35-40 times compare to full-length SP. Moreover, the foreign protein without SP and TMD failed to display on the BV, while the integration of foreign proteins with GP64 TMD fusion at the c-terminal was significantly enhanced by 12-26 times compared to the control. Thus, these new strategies developed the BV surface display system further.

Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si.

Two-dimensional electron gas (2DEG) at the interface of amorphous Al2O3/SrTiO3 (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.