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1.
Small ; 15(40): e1902065, 2019 Oct.
Artigo em Inglês | MEDLINE | ID: mdl-31379070

RESUMO

The development of high performance gas sensors that operate at room temperature has attracted considerable attention. Unfortunately, the conventional mechanism of chemiresistive sensors is restricted at room temperature by insufficient reaction energy with target molecules. Herein, novel strategy for room temperature gas sensors is reported using an ionic-activated sensing mechanism. The investigation reveals that a hydroxide layer is developed by the applied voltages on the SnO2 surface in the presence of humidity, leading to increased electrical conductivity. Surprisingly, the experimental results indicate ideal sensing behavior at room temperature for NO2 detection with sub-parts-per-trillion (132.3 ppt) detection and fast recovery (25.7 s) to 5 ppm NO2 under humid conditions. The ionic-activated sensing mechanism is proposed as a cascade process involving the formation of ionic conduction, reaction with a target gas, and demonstrates the novelty of the approach. It is believed that the results presented will open new pathways as a promising method for room temperature gas sensors.

2.
ACS Appl Mater Interfaces ; 11(7): 7529-7538, 2019 Feb 20.
Artigo em Inglês | MEDLINE | ID: mdl-30672291

RESUMO

Morphological evolution accompanying a surface roughening and preferred orientation is an effective way to realize a high-performance gas sensor because of its significant potential as a chemical catalyst through chemical potentials and atomic energy states. In this work, we investigated a heterojunction of double-side-W-decorated NiO nanoigloos fabricated through radio frequency sputtering and a soft-template method. Interestingly, a morphological evolution characterized by a pyramidal rough surface and the preferred orientation of the (111) plane was observed upon decorating the bare NiO nanoigloos with W. The underlying mechanism of the morphological evolution was precisely demonstrated based on the van der Drift competitive growth model originating from the oxygen transport and chemical strain in the lattice. The gas sensing properties of W-decorated NiO show an excellent NO2 response and selectivity when compared to other gases. In addition, high response stability was evaluated under interference gas and humidity conditions. The synergistic effects on the sensing performance were interpreted on the basis of the morphological evolution of W-decorated NiO nanoigloos.

3.
ACS Appl Mater Interfaces ; 10(37): 31594-31602, 2018 Sep 19.
Artigo em Inglês | MEDLINE | ID: mdl-30136839

RESUMO

The utilization of edge sites in two-dimensional materials including transition-metal dichalcogenides (TMDs) is an effective strategy to realize high-performance gas sensors because of their high catalytic activity. Herein, we demonstrate a facile strategy to synthesize the numerous edge sites of vertically aligned MoS2 and larger surface area via SiO2 nanorod (NRs) platforms for highly sensitive NO2 gas sensor. The SiO2 NRs encapsulated by MoS2 film with numerous edge sites and partially vertical-aligned regions synthesized using simple thermolysis process of [(NH4)2MoS4]. Especially, the vertically aligned MoS2 prepared on 500 nm thick SiO2 NRs (500MoS2) shows approximately 90 times higher gas-sensing response to 50 ppm NO2 at room temperature than the MoS2 film prepared on flat SiO2, and the theoretical detection limit is as low as ∼2.3 ppb. Additionally, it shows reliable operation with reversible response to NO2 gas without degradation at an operating temperature of 100 °C. The use of the proposed facile approach to synthesize vertically aligned TMDs using nanostructured platform can be extended for various TMD-based devices including sensors, water splitting catalysts, and batteries.

4.
ACS Appl Mater Interfaces ; 10(1): 1050-1058, 2018 Jan 10.
Artigo em Inglês | MEDLINE | ID: mdl-29235841

RESUMO

The utilization of p-p isotype heterojunctions is an effective strategy to enhance the gas sensing properties of metal-oxide semiconductors, but most previous studies focused on p-n heterojunctions owing to their simple mechanism of formation of depletion layers. However, a proper choice of isotype semiconductors with appropriate energy bands can also contribute to the enhancement of the gas sensing performance. Herein, we report nickel oxide (NiO)-decorated cobalt oxide (Co3O4) nanorods (NRs) fabricated using the multiple-step glancing angle deposition method. The effective decoration of NiO on the entire surface of Co3O4 NRs enabled the formation of numerous p-p heterojunctions, and they exhibited a 16.78 times higher gas response to 50 ppm of C6H6 at 350 °C compared to that of bare Co3O4 NRs with the calculated detection limit of approximately 13.91 ppb. Apart from the p-p heterojunctions, increased active sites owing to the changes in the orientation of the exposed lattice surface and the catalytic effects of NiO also contributed to the enhanced gas sensing properties. The advantages of p-p heterojunctions for gas sensing applications demonstrated in this work will provide a new perspective of heterostructured metal-oxide nanostructures for sensitive and selective gas sensing.

5.
ACS Appl Mater Interfaces ; 6(20): 17785-91, 2014 Oct 22.
Artigo em Inglês | MEDLINE | ID: mdl-25243475

RESUMO

Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>10(6)) and a low leakage current at the OFF state (∼10(-13) A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

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