Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes.

We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm. 6LiF and 10B4C films, which were placed on top of the diodes, were used as thermal neutron converters. We achieved a thermal neutron efficiency of 5.02% with a 6LiF thermal neutron converter, which is one of the highest efficiencies reported to date. In addition, a temperature-dependent radiation response to alpha particles was presented. Neutron irradiations were performed in a JSI TRIGA dry chamber and an Am-241 wide-area alpha source was used for testing the alpha response of the 4H-SiC Schottky barrier diodes.

Targeting cell surface glycans with lectin-coated fluorescent nanodiamonds.

Glycosylation is arguably the most important functional post-translational modification in brain cells and abnormal cell surface glycan expression has been associated with neurological diseases and brain cancers. In this study we developed a novel method for uptake of fluorescent nanodiamonds (FND), carbon-based nanoparticles with low toxicity and easily modifiable surfaces, into brain cell subtypes by targeting their glycan receptors with carbohydrate-binding lectins. Lectins facilitated uptake of 120 nm FND with nitrogen-vacancy centers in three types of brain cells - U87-MG astrocytes, PC12 neurons and BV-2 microglia cells. The nanodiamond/lectin complexes used in this study target glycans that have been described to be altered in brain diseases including sialic acid glycans via wheat (Triticum aestivum) germ agglutinin (WGA), high mannose glycans via tomato (Lycopersicon esculentum) lectin (TL) and core fucosylated glycans via Aleuria aurantia lectin (AAL). The lectin conjugated nanodiamonds were taken up differently by the various brain cell types with fucose binding AAL/FNDs taken up preferentially by glioblastoma phenotype astrocyte cells (U87-MG), sialic acid binding WGA/FNDs by neuronal phenotype cells (PC12) and high mannose binding TL/FNDs by microglial cells (BV-2). With increasing recognition of glycans having a role in many diseases, the lectin bioconjugated nanodiamonds developed here are well suited for further investigation into theranostic applications.

Multimodal Imaging and Soft X-Ray Tomography of Fluorescent Nanodiamonds in Cancer Cells.

Multimodal imaging promises to revolutionize the understanding of biological processes across scales in space and time by combining the strengths of multiple imaging techniques. Fluorescent nanodiamonds (FNDs) are biocompatible, chemically inert, provide high contrast in light- and electron-based microscopy, and are versatile optical quantum sensors. Here it is demonstrated that FNDs also provide high absorption contrast in nanoscale 3D soft X-ray tomograms with a resolution of 28 nm in all dimensions. Confocal fluorescence, atomic force, and scanning electron microscopy images of FNDs inside and on the surface of PC3 cancer cells with sub-micrometer precision are correlated. FNDs are found inside ≈1 µm sized vesicles present in the cytoplasm, providing direct evidence of the active uptake of bare FNDs by cancer cells. Imaging artefacts are quantified and separated from changes in cell morphology caused by sample preparation. These results demonstrate the utility of FNDs in multimodal imaging, contribute to the understanding of the fate of FNDs in cells, and open up new possibilities for biological imaging and sensing across the nano- and microscale.

pH Nanosensor Using Electronic Spins in Diamond.

Nanoscale measurements provide insight into the nano world. For instance, nanometric spatiotemporal distribution of intracellular pH is regulated by and regulates a variety of biological processes. However, there is no general method to fabricate nanoscale pH sensors. Here, we, to endow pH-sensing functions, tailor the surface properties of a fluorescent nanodiamond (FND) containing nitrogen-vacancy centers (NV centers) by coating the FND with an ionic chemical layer. The longitudinal relaxation time T1 of the electron spins in the NV centers inside a nanodiamond modified by carboxyl groups on the particle surface was found to depend on ambient pH between pH 3 and pH 7, but not between pH 7 and pH 11. Therefore, a single particle of the carboxylated nanodiamond works as a nanometer-sized pH meter within a microscopic image and directly measures the nanometric local pH environment. Moreover, the pH dependence of an FND was changed by coating it with a polycysteine layer, which contains a multitude of thiol groups with higher pKa. The polycysteine-coated nanodiamond obtained a pH dependence between pH 7 and pH 11. The pH dependence of the FND was also observed in heavy water (D2O) buffers. This indicates that the pH dependence is not caused by magnetic noise induced by 1H nuclear spin fluctuations, but by electric noise induced by ion exchanges. Via our method, the sensitive pH range of the nanodiamond pH sensor can potentially be controlled by changing the ionic layer appropriately according to the target biological phenomena.

Radiation Response of Negative Gate Biased SiC MOSFETs.

Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. Radiation response of commercial-grade prototype SiC MOSFETs with applying the gate bias is of interest, in terms of installation of the device in robots or sensors working under such radioactive circumstances. Due to gamma-rays irradiation, the threshold voltages (Vth) of samples with un- and negative-biased up to -4.5 V slightly shift toward the negative voltage side. In contrast, the positive bias of 2.25 V shifts Vth more negatively. Positive charge densities trapped in the gate oxide of un- and positive-biased samples increased with increasing dose. However, no significant increase was observed for negative-biased samples of -2.25 and -4.5 V. We calculated characteristic parameters for the accumulation of holes in the gate oxide, σpJp which is defined as the product of current density due to holes generated by irradiation and capture cross section for a hole in a trap, and it is lower for these negative biased samples compared with the unbiased case. Application of appropriate negative gate biases to SiC MOSFETs during irradiation suppresses accumulation of positive charges in the gate oxide and negative shift of Vth, due to irradiation.