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Modulation of Electronic and Optical Anisotropy Properties of ML-GaS by Vertical Electric Field.
Guo, Fei; Wu, Yaping; Wu, Zhiming; Ke, Congming; Zhou, Changjie; Chen, Ting; Li, Heng; Zhang, Chunmiao; Fu, Mingming; Kang, Junyong.
Afiliação
  • Guo F; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Wu Y; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China. ypwu@xmu.edu.cn.
  • Wu Z; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China. zmwu@xmu.edu.cn.
  • Ke C; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Zhou C; Department of Physics, School of Science, Jimei University, Xiamen, 361021, People's Republic of China.
  • Chen T; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Li H; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Zhang C; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Fu M; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China.
  • Kang J; Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, 361005, People's Republic of China. jykang@xmu.edu.cn.
Nanoscale Res Lett ; 12(1): 409, 2017 Dec.
Article em En | MEDLINE | ID: mdl-28618718

Texto completo: 1 Coleções: 01-internacional Temas: Agentes_cancerigenos Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Temas: Agentes_cancerigenos Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2017 Tipo de documento: Article