Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method.

Yu, Jia-Cheng; Zhou, Zai-Fa; Su, Jia-Le; Xia, Chang-Feng; Zhang, Xin-Wei; Wu, Zong-Ze; Huang, Qing-An

Yu, Jia-Cheng; Zhou, Zai-Fa; Su, Jia-Le; Xia, Chang-Feng; Zhang, Xin-Wei; Wu, Zong-Ze; Huang, Qing-An.

Afiliação

Yu JC; Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. 220151251@seu.edu.cn.
Zhou ZF; Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. zfzhou@seu.edu.cn.
Su JL; Central Semiconductor Manufacturing Corporation, Wuxi 214061, China. 220161278@seu.edu.cn.
Xia CF; Central Semiconductor Manufacturing Corporation, Wuxi 214061, China. hqa@seu.edu.cn.
Zhang XW; Central Semiconductor Manufacturing Corporation, Wuxi 214061, China. sujl@csmc.crmicro.com.
Wu ZZ; Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. xiacf@csmc.crmicro.com.
Huang QA; Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China. zhangxw@csmc.crmicro.com.

Micromachines (Basel) ; 9(2)2018 Feb 09.

Article em En | MEDLINE | ID: mdl-30393350

Palavras-chave

Monte Carlo simulation; deep reactive ion etching; level set method; ray tracing algorithm; surface evolution

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Texto completo: 1 Temas: ECOS / Financiamentos_gastos Bases de dados: MEDLINE Tipo de estudo: Health_economic_evaluation / Prognostic_studies Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China

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