Detalhe da pesquisa
1.
Selective area growth of AlN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AlN pseudo-templates.
Nanotechnology
; 28(36): 365704, 2017 Sep 08.
Artigo
em Inglês
| MEDLINE | ID: mdl-28604369
2.
Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy.
J Microsc
; 262(2): 167-70, 2016 May.
Artigo
em Inglês
| MEDLINE | ID: mdl-26366483
3.
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.
Nanotechnology
; 27(6): 065705, 2016 Feb 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-26759358
4.
Light-emitting-diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.
Nanotechnology
; 25(43): 435203, 2014 Oct 31.
Artigo
em Inglês
| MEDLINE | ID: mdl-25297338
5.
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
Nanotechnology
; 24(17): 175303, 2013 May 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-23558410
6.
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.
Nanotechnology
; 23(48): 485701, 2012 Dec 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-23123435