Detalhe da pesquisa
1.
Coalescence, crystallographic orientation and luminescence of ZnO nanowires grown on Si(001) by chemical vapour transport.
Nanotechnology
; 31(47): 475603, 2020 Nov 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-32914764
2.
Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy.
Nano Lett
; 19(9): 5938-5948, 2019 Sep 11.
Artigo
em Inglês
| MEDLINE | ID: mdl-31385709
3.
Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al x O y : in situ quadrupole mass spectrometry studies.
Nanotechnology
; 30(15): 154002, 2019 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-30641512
4.
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3.
Nanotechnology
; 30(11): 114001, 2019 Mar 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-30681980
5.
Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils.
Nanotechnology
; 28(42): 425602, 2017 Oct 20.
Artigo
em Inglês
| MEDLINE | ID: mdl-28930094
6.
Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensembles.
Nanotechnology
; 27(32): 325601, 2016 Aug 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-27354451
7.
Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.
Nano Lett
; 15(6): 3743-7, 2015 Jun 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-26001039
8.
Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy.
Nano Lett
; 20(9): 6930, 2020 Sep 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-32794760
9.
Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process.
Nanotechnology
; 26(44): 445604, 2015 Nov 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-26457772
10.
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
Nanotechnology
; 26(8): 085605, 2015 Feb 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-25656795
11.
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence.
Nanotechnology
; 25(45): 455702, 2014 Nov 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-25327280
12.
Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy.
Microsc Microanal
; 18(5): 1143-54, 2012 Oct.
Artigo
em Inglês
| MEDLINE | ID: mdl-23058502